BUZ102SL ,SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)CharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS DGate thresho ..
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BUZ102SL
N-Channel SIPMOS Power Transistor
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fechnologles maprov
Features Product Summary
. N channel Drain source voltage VDS 55 v
. Enhancement mode Drain-Source on-state resistance RDSM) 0.015 Q
. Avalanche rated Continuous drain current ID 47 A
q Logic Level
. dv/dt rated
q 175 ( operating temperature
VPT051 64
VPT05155
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ102SL P-T0220-3-1 Q67040-S4010-A2 Tube G D S
BUZ102SL E3045A P-T0263-3-2 Q67040-S4010-A6 Tape and Reel
BUZ102SL E3045 P-T0263-3-2 Q67040-S4010-A5 Tube
Maximum Ratings, at Ti = 25 ( unless otherwise specified
Parameter I Symbol Value Unit
Continuous drain current ID A
TC = 25 ( 47
TC = 100 "C 33
Pulsed drain current leuIse 188
To = 25 (
Avalanche energy, single pulse EAS 245 ml
ID =47A, VDD=25 V, RG3 =25 Q
Avalanche energy, periodic limited by Timax EAR 12
Reverse diode dv/dt dv/dt kV/ws
ls = 47 A, VDS = 40 V, di/dt= 200 A/ps,
Timax = 175 "C
Gate source voltage VGS -20 V
Power dissipation Ptot 120 W
TC = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
Infineon BUZ102SL
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.25 K/W
Thermal resistance, junction - ambient, leded [-7th - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V
DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGSM 1.2 1.6 2
ID = 90 pA
Zero gate voltage drain current IDSS pA
1/Ds=501/,1/Gs=01/,Tj=25oC - 0.1 1
VDS=50V, VGs=0V,Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 4.5 V, b = 33 A - 0.021 0.024
VGS = 10 V, ID = 33 A - 0.0135 0.015
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2 05.99
