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BUZ101SL ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D1.2 1.6 2Gat ..
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BUZ101S
N-Channel SIPMOS Power Transistor
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fechnologles “mpwa
SIPMOS® PowerTransistor
Features Product Summary
. N channel Drain source voltage VDS 55 v
. Enhancement mode Drain-Source on-state resistance RDSWI) 0.05 Q
. Avalanche rated Continuous drain current ID 22 A
. d v/dt rated
q 175 ( operating temperature
VPT051 64
VPT05155
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube G D S
BUZ101S E3045A P-T0263-3-2 Q67040-S4013-A6 Tape and Reel
BUZ101S E3045 P-T0263-3-2 Q67040-S4031-A5 Tube
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter ' Symbol Value Unit
Continuous drain current /D A
TC = 25 ''C 22
TC = 100 ( 16
Pulsed drain current IDpulse 88
TC = 25 "C
Avalanche energy, single pulse EAS 90 ml
ID =22A, VDD=25V, RGS=25£2
Avalanche energy, periodic limited by Timex EAR 5.5
Reverse diode dv/dt dv/dt 6 kV/ps
IS = 22 A, VDS = 40 V, di/dt= 200 Alps,
Tmax = 175 "C
Gate source voltage VGS 120 V
Power dissipation Pt0t 55 W
Tc = 25 "C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
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Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 2.7 K/W
Thermal resistance, junction - ambient, leded [-7th - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGs = 0 V, ID = 0.25 mA, 7] = 25 (
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ho = 40 pA
Zero gate voltage drain current IDSS pA
1hos=501/,1/Gs--01/,Tj=25''C - 0.1 1
VDs=50V, VGs=0V,TJ-=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGs = 10 V, ho = 16 A - 0.042 0.05
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2
