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BUZ100SLSIEMENSN/a255avaiN-Channel SIPMOS Power Transistor


BUZ100SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
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BUZ100SL
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor
Features
q N channel
. Enhancement mode
. Avalanche rated
q Logic Level
q d v/dt rated
Product Summary
BUZ 100SL
Drain source voltage
Drain-Source on-state resistance
Roam) 0.012 n
Continuous drain current
q 175°C operating temperature
VPT05164
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
BUZ1OOSL P-T0220-3-1 Q67040-S4000-A2 Tube G D S
BUZ1OOSL E3045A P-TO263-3-2 Q67040-S4000-A6 Tape and Reel
BUZ100SL E3045 P-T0263-3-2 Q67040-S4000-A5 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current /D A
TC = 25 ''C 70
TC = 100 ( 50
Pulsed drain current IDpuIse 280
TC = 25 (
Avalanche energy, single pulse EAS 380 mJ
ID = 70A, VDD=25V, RGS=25§2
Avalanche energy, periodic limited by Timax EAR 17
Reverse diode dv/dt dv/dt kV/ps
ls = 70 A, bbs = 40 V, di/dt= 200 Alps,
ijax = 175 (
Gate source voltage VGS :20 V
Power dissipation Ptot 170 W
TC = 25 ''C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon BUZ 100SL
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.88 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGs = 0V, ho = 0.25 mA, 7] = 25 "C
Gate threshold voltage, VGS = VDS Vegan) 1.2 1.6 2
ID = 130 pA
Zero gate voltage drain current IDSS pA
1/bs=50v,v'Gs=01/,Tj=25oC - 0.1 1
VDS=50V,VGS=0V,7]=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) n
VGS = 4.5 V, b = 50 A - 0.016 0.018
VGS = 10 V, ID = 50 A - 0.01 0.012
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
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