BUZ100 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BUZ100SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.012R Ω• Enhanceme ..
BUZ101S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.05R Ω• Enhanceme ..
BUZ101SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.04R Ω• Enhancemen ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUZ100
N-Channel SIPMOS Power Transistor
BUZ 100
SIPMOS ®
Power Transistor• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Maximum Ratings
BUZ 100
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BUZ 100
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BUZ 100
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BUZ 100
Drain current D = ƒ(TC)
parameter: VGS ≥ 10 V20406080100120140°C180C
10
15
20
25
30
35
40
45
50
55
65 D
Power dissipation tot = ƒ(TC)20406080100120140°C180C
20
40
60
80
100
120
140
160
180
200
220
260 tot
Safe operating area D = ƒ(VDS)
parameter: D = 0.01, TC = 25°C10 10 10 10
A D
Transient thermal impedance th JC = ƒ(tp)
parameter: D = tp / T
-4 10
-3 10
-2 10
-1 10 10
K/W thJC
BUZ 100
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.00.51.01.52.02.53.03.54.0V5.0DS
10
20
30
40
50
60
70
80
90
100
110
120
140 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: VGS20406080A120D
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.055 DS (on)
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 μsDS≥2 x ID x RDS(on)max
10
15
20
25
30
35
40
45
50
60 D
Typ. forward transconductance gfs
= f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
10
15
20
25
30
40 fs
