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BUXD87T4 Fast Delivery,Good Price
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BUXD87T4STN/a17500avaiHIGH VOLTAGE SILICON POWER TRANSISTOR


BUXD87T4 ,HIGH VOLTAGE SILICON POWER TRANSISTORBUXD87®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARDIPAK/DPAK PACKAGE■ HIGH VOLT ..
BUY49S ,Leaded Small Signal Transistor General PurposeBUY49SSILICON NPN TRANSISTOR■ SGS-THOMSON PREFERRED SALESTYPE■ NPN TRANSISTOR■ FAST SWITCHING SPEED ..
BUY71 , Bipolar NPN Device
BUZ10 ,Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220BUZ10®N - CHANNEL 50V - 0.06Ω - 23A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ10 50 V < 0.0 ..
BUZ100 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode


BUXD87T4
HIGH VOLTAGE SILICON POWER TRANSISTOR
BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS:
SWITCH MODE POWER SUPPLIES GENERAL PURPOSE SWITCHING
DESCRIPTION

The BUXD87 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
April 1999
ABSOLUTE MAXIMUM RATINGS

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curves
BUXD87

2/6
DC Current Gain
Collector Emitter Saturation Voltage
Reverse Biased SOA
DC Current Gain
Base Emitter Saturation Voltage
BUXD87

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BUXD87
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BUXD87
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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BUXD87

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