BUV298AV ,NPN TRANSISTOR POWER MODULEBUV298AV®NPN TRANSISTOR POWER MODULE■ HIGH CURRENT POWER BIPOLAR MODULE■ VERY LOW R JUNCTION CASEth ..
BUV46 ,POWER TRANSISTORS(6A,400-450V,70W)APPLICATIONS ■ GENERAL PURPOSE SWITCHING 32■ SW ..
BUV47A , NPN SILICON POWER TRANSISTORS
BUV48A ,POWER TRANSISTORS(15A,400-450V,150W)APPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 ..
BUV48A. ,POWER TRANSISTORS(15A,400-450V,150W)BUX48/48ABUV48A/V48AFI®HIGH POWER NPN SILICON TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES ■ ..
BUV48AFI ,HIGH POWER NPN SILICON TRANSISTORSAPPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
C30T04QH , Schottky Barrier Diode
BUV298AV
NPN TRANSISTOR POWER MODULE
BUV298AVNPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD
AREAS INSULATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS WELDING EQUIPMENT
October 2001
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
BUV298AV2/7
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector Emitter Voltage Versus
Base Emitter Resistance
Base Emitter Saturation Voltage
BUV298AV3/7
Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Forward Biased SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
BUV298AV4/7
(1) Fast electronics switch (2) Non-inductive load
Dc Current Gain Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
BUV298AV5/7
BUV298AV6/7
