BUT12A ,NPN Silicon TransistorApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings ..
BUT12A ,NPN Silicon Transistor
BUT12A ,NPN Silicon Transistor
BUT12AI ,Silicon Diffused Power Transistor
BUT12AI ,Silicon Diffused Power Transistor
BUT12AX ,Silicon diffused power transistor
C2719 , Photosensor amplifier
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
BUT12A
NPN Silicon Transistor
BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BUT12 850 V : BUT12A 1000 V V Collector-Emitter Voltage CEO : BUT12 400 V : BUT12A 450 V I Collector Current (DC) 8 A C I *Collector Current (Pulse) 20 A CP I Base Current 4 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 175 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 100mA, L = 25mH 400 V CEO C I Collector Cut-off Current V = V , V = 0 1 mA CES CE CES BE I Emitter Cut-off Current V = 9V, I = 0 10 mA EBO BE C V (sat) * Collector-Emitter Saturation Voltage I = 6A, I = 1.2A 1.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 6A, I = 1.2A 1.5 V BE C B t Turn On Time V = 250V, I = 6A 1 μs ON CC C I = - I = 1.2A t Storage Time B1 B2 4 μs STG R = 41.6Ω L t Fall Time 0.8 μs F * Pulsed Test: PW = 300μs, duty cycle = 1.5% ©2001 Rev. A1, August 2001
