BUT11TU ,NPN Silicon TransistorApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings ..
BUT12 ,NPN Silicon Transistor
BUT12 ,NPN Silicon Transistor
BUT12A ,NPN Silicon TransistorApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings ..
BUT12A ,NPN Silicon Transistor
BUT12A ,NPN Silicon Transistor
C2719 , Photosensor amplifier
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
C3068 , TYPE CMP / CL3P
C30902S , Silicon Avalanche Photodiodes
BUT11TU
NPN Silicon Transistor
BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage V CBO : BUT11 850 : BUT11A 1000 V Collector-Emitter Voltage V CEO : BUT11 400 : BUT11A 450 V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 5 A C I *Collector Current (Pulse) 10 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BUT11 I = 100mA, I = 0 400 V C B : BUT11A 450 V I Collector Cut-off Current CES : BUT11 V = 850V, V = 0 1 mA CE BE : BUT11A 1 mA I Emitter Cut-off Current V = 9V, I = 0 10 mA EBO BE C V (sat) Collector-Emitter Saturation Voltage CE : BUT11 I = 3A, I = 0.6A 1.5 V C B : BUT11A I = 2.5A, I = 0.5A 1.5 V C B V (sat) Base-Emitter Saturation Voltage BE : BUT11 I = 3A, I = 0.6A 1.3 V C B : BUT11A I = 2.5A, I = 0.5A 1.3 V C B t Turn On Time V = 250V, I = 2.5A 1 μs ON CC C I = -I = 0.5A t Storage Time B1 B2 4 μs STG R = 100Ω L t Fall Time 0.8 μs F * Pulsed: pulsed duration = 300μs, duty cycle = 1.5% Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 1.25 °C/W θjC ©2001 Rev. B1, August 2001
