BUP603D ,IGBT Duopack (IGBT with Antiparallel ...BUP 603DIGBT With Antiparallel DiodePreliminary data• Low forward voltage drop• High switching spee ..
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BUP603D
IGBT Duopack (IGBT with Antiparallel ...
BUP 603D
IGBT With Antiparallel Diode
Preliminary data• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Maximum Ratings
BUP 603D
Maximum Ratings
Thermal Resistance
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
AC Characteristics
BUP 603D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Switching Characteristics, Inductive Load at Tj = 125 °C
Free-Wheel Diode
BUP 603D
Power dissipation tot = ƒ(TC)
parameter: Tj ≤ 150 °C20406080100120°C160C
20
40
60
80
100
120
140
160
180
220 tot
Collector current C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C20406080100120°C160C
10
15
20
25
30
35
40
45
55 C
Safe operating area C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1 10 10 10 10 10
A C
Transient thermal impedance IGBTth JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10 10
K/W thJC
BUP 603D
Typ. output characteristics C = f (VCE)
parameter: tp = 80 μs, Tj = 25 °C123V5CE
10
15
20
25
30
35
40
45
50
60 C
Typ. output characteristics C = f (VCE)
parameter: tp = 80 μs, Tj = 125 °C123V5CE
10
15
20
25
30
35
40
45
50
60 C
Typ. transfer characteristics C = f (VGE)
parameter: tp = 80 μs, VCE = 20 V
10
15
20
25
30
35
40
45
50
60 C
BUP 603D
Typ. switching time t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 30 A20406080Ω120G10 10 10
ns t
Typ. switching time I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω102030405060A80C10 10 10
ns t
Typ. switching losses E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω
mWs
10
Typ. switching losses E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 30 A
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
mWs
5.0
