BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetBUP 311DInfineonIGBT With Antiparallel DiodePreliminary data sheet• Low forward voltage drop High ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetCharacteristicsGate threshold voltage V VGE(th)V = V I = 0.3 mA, T = 25 °C 4.5 5.5 6.5GE CE, C jCol ..
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BUS13A , Silicon NPN Power Transistors
BUT11 ,NPN Silicon TransistorApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings ..
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BUP311D
IGBT With Antiparallel Diode Preliminary data sheet
Infineon
BUP 311D
IGBT With Antiparallel Diode
Preliminary data sheet
q Low forward voltage drop
q High switching speed
q Low tail current
. Latch-up free
. Including fast free-wheel diode
Former Development ID: BUP 3JKD
VPT05156
Pin 1 Pin 2 Pin 3
Type VCE Ic Package Ordering Code
BUP 311D 1200V A TO-218 AB C67078-A4102
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kg 1200
Gate-emitter voltage VGE , 20
DC collector current lc A
TC = 25 ''C 20
TC = 100 ''C 12
Pulsed collector current, tp = 1 ms lcpuls
TC = 25 °C 40
Diode forward current IF
TC = 100 ''C tbd
Pulsed diode current, tp = 1 ms leuIs
TC = 25 "C tbd
Power dissipation Ptot W
TC = 25 ''C 125
Chip or operating temperature T, -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Semiconductor Group
May-06-1999
Infineon BUM”
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature T, -55 ... + 150 "C
Storage temperature Tstg -55 ... + 150
IEC climatic category, DIN IEC 68-1 - 55/ 150/ 56 -
Thermal Resistance
Thermal resistance, junction - case Rth s 1 KNV
Diode thermal resistance, chip case RthJCD f 2.5
Electrical Characteristics, at T] = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.3 mA, T] = 25 "C 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(Sat)
VGE=15V,IC=8A,TJ-=25°C - 2.5 3
VGE=15V,IC=8A, Tj=125°C - 3.1 3.7
VGE=15V,/C=16A,Tj=25°C - 3.4 -
VGE=15V,/C=16A, Tj=125°C - 4.3 -
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, T, = 25 °C - - 0.4
Gate-emitter leakage current IGES nA
VGE=25V, VCE=0V - - 120
Semiconductor Group 2 May-06-1999
