BUP212 ,IGBT TransistorBUP 212IGBT• Low forward voltage drop• High switching speed• Low tail current • Latch-up free• Aval ..
BUP303 ,IGBT TransistorBUP 303IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP304 ,IGBT TransistorBUP 304IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetBUP 311DInfineonIGBT With Antiparallel DiodePreliminary data sheet• Low forward voltage drop High ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetCharacteristicsGate threshold voltage V VGE(th)V = V I = 0.3 mA, T = 25 °C 4.5 5.5 6.5GE CE, C jCol ..
BUP313D ,IGBT Duopack (IGBT with Antiparallel ...BUP 313DIGBT With Antiparallel DiodePreliminary data• Low forward voltage drop• High switching spee ..
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BUP212
IGBT Transistor
BUP 212
IGBT• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Maximum Ratings
BUP 212
Maximum Ratings
Thermal Resistance
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
AC Characteristics
BUP 212
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Switching Characteristics, Inductive Load at Tj = 125 °C
BUP 212
Power dissipation tot = ƒ(TC)
parameter: Tj ≤ 150 °C20406080100120°C160C
10
20
30
40
50
60
70
80
90
100
110
130 tot
Collector current C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C20406080100120°C160C
10
12
14
16
18
20
22
26 C
Safe operating area C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1 10 10 10
A C
Transient thermal impedance IGBTth JC = ƒ(tp)
parameter: D = tp / T
-3
-2 10
-1 10 10 10
K/W thJC
BUP 212
Typ. output characteristics C = f (VCE)
parameter: tp = 80 μs, Tj = 25 °C123V5CE
10
12
14
16
20 C
Typ. output characteristics C = f (VCE)
parameter: tp = 80 μs, Tj = 125 °C123V5CE
10
12
14
16
20 C
Typ. transfer characteristics C = f (VGE)
parameter: tp = 80 μs, VCE = 20 V
10
12
14
16
18
20
22
25 C
BUP 212
Typ. switching time t = f (RG) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, IC =8 A50100150200250300350400Ω500G10 10 10
ns t
Typ. switching time t = f (IC) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, RG =153Ω4812162024A30C10 10 10
ns t
Typ. switching losses E = f (IC) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, RG =153Ω
mWs
10
Typ. switching losses E = f (RG) , inductive load , Tj = 125°C
par.:VCE=600V, VGE = ±15V, IC =8 A
mWs
10
