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BULT118STN/a50avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS


BULT118 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
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C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT


BULT118
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BULT118
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION

The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
June 2000
ABSOLUTE MAXIMUM RATINGS

1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
BULT118

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Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BULT118

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Inductive Fall Time Inductive Storage Time
Resistive Fall Time Resistive Load Storage Time
Reverse Biased SOA
BULT118

4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
BULT118

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BULT118
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