BULK128 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: 21■ ELECTRONIC BALLASTS FORFLUORESC ..
BULK128DB ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: SOT-82■ ELECTRONIC BALLASTS FORFLUO ..
BULK128D-B ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBULK128D-B®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ ..
BULT118 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
BUP200 ,IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)BUP 200IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP212 ,IGBT TransistorBUP 212IGBT• Low forward voltage drop• High switching speed• Low tail current • Latch-up free• Aval ..
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BULK128
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BULK128HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
November 2001
ABSOLUTE MAXIMUM RATINGS1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
BULK1282/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BULK1283/7
Inductive Load Fall Time Inductive Load Storage Time
Resistive Load Fall Time Resistive Load Storage Time
Reverse Biased SOA
BULK1284/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
BULK1285/7
BULK1286/7
