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BULD1101ET4STN/a5000avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


BULD1101ET4 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBULD1101ET4®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking S ..
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BULD1101ET4
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BULD1101ET4
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION

The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
April 2003
ABSOLUTE MAXIMUM RATINGS

1/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
BULD1101ET4

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Safe Operating Area
Output Characteristics
Base-Emitter Saturation Voltage
Derating Curve
Collector-Emitter Saturation Voltage
DC Current Gain
BULD1101ET4

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DC Current Gain
Reverse Biased Safe Operating Area
Resistive Load Switching Times
BULD1101ET4

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Figure 2: Energy Rating Test Circuit
Figure 1: Resistive Load Switching Test Circuit
BULD1101ET4

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BULD1101ET4
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