BUL810 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS 2■ ELECTRONIC TRANSFORMER FOR1HALOG ..
BUL85D ,MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL85D®MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER ..
BUL85D ,MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL85D®MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER ..
BUL903EDFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL903EDFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ INTEGRATED ANTISATURATION ANDPROTECTIO ..
BULB128 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
BULB128-1 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBULB128-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOROrdering Code Marking ShipmentBULB128-1 BU ..
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BUL810
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL810HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
APPLICATIONS ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION The BUL810 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
February 2003
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curve
BUL8102/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL8103/6
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
BUL8104/6
BUL8105/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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BUL8106/6
