BUL67 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONICS TRANFORMER FORTO-220H ..
BUL742 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL742®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF DYN ..
BUL742A ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL742A®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF DY ..
BUL742A ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL742A®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF DY ..
BUL742C ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0)1050 VCES BEV ..
BUL743 ,High voltage fast-switching NPN power transistorElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitCollector cut-off cur ..
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT
BUL67
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL67HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
APPLICATIONS ELECTRONICS TRANFORMER FOR
HALOGEN LAMPS SWITCH MODE POWER SUPPLIES
DESCRIPTION The BUL67 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and in low cost switch-mode power
supplies.
February 2003
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL672/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL673/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
BUL674/6
BUL675/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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BUL676/6
