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Partno	Mfg	Dc	Qty	Available	Descript
BUL510	ST	N/a	200	avai	Silicon NPN Power Transistors TO-220C package

BUL510 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS 32■ ELECTRONIC BALLASTS FOR1FLUORES ..
BUL58D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONIC TRANSFORMERS FORHALOG ..
BUL59 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONIC TRANSFORMERS FOR32HAL ..
BUL654 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONIC TRANSFORMER FOR 32HALO ..
BUL67 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONICS TRANFORMER FORTO-220H ..
BUL742 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL742®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF DYN ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A

BUL510
Silicon NPN Power Transistors TO-220C package
BUL510
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
APPLICATIONS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES ELECTRONIC TRANSFORMER FOR
HALOGEN LAMP
DESCRIPTION
The BUL510 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
February 2003
ABSOLUTE MAXIMUM RATINGS
1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL510
2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL510
3/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
BUL510
4/6
BUL510
5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BUL510
6/6

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