BUL381D ,Silicon NPN Power Transistors TO-220C packageBUL381D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HI ..
BUL382 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL310FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn NPN TRANS ..
BUL382. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORMAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 1000 VCES BEV Collect ..
BUL382D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 800 VV ..
BUL38D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONIC TRANSFORMERS FORHALOGE ..
BUL39D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL39D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ NPN TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ M ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL381D
Silicon NPN Power Transistors TO-220C package
BUL381DHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION The BUL381D is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
September 2001
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL381D2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL381D3/6
Reverse Biased SOA
Inductive Load Switching Test Circuit
Resistive Load Switching Test Ciurcuit
BUL381D4/6
BUL381D5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BUL381D6/6
