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Partno	Mfg	Dc	Qty	Available	Descript
BUL381	ST	N/a	25	avai	Silicon NPN Power Transistors TO-220C package

BUL381 ,Silicon NPN Power Transistors TO-220C packageABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 1300 VV ..
BUL381D ,Silicon NPN Power Transistors TO-220C packageBUL381D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HI ..
BUL382 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL310FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn NPN TRANS ..
BUL382. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORMAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 1000 VCES BEV Collect ..
BUL382D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 800 VV ..
BUL38D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS ■ ELECTRONIC TRANSFORMERS FORHALOGE ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A

BUL381
Silicon NPN Power Transistors TO-220C package
BUL213
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC
APPLICATIONS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL213is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance.It usesa Hollow Emitter
structureto enhance switching speeds.
The BUL seriesis designed for usein lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
April 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE=0) 1300 V
VCEO Collector-Emitter Voltage(IB=0) 600 V
VEBO Emitter-Base Voltage(IC =0) 9 V Collector Current 3 A
ICM Collector Peak Current(tp <5 ms) 6 A Base Current 2 A
IBM Base Peak Current(tp <5 ms) 4 A
Ptot Total DissipationatTc =25o C60 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC2
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =1300V
VCE =1300V Tj= 125oC
ICEO Collector Cut-off
Current(IB =0)
VCE =600V 250 μA
VCEO(sus) Collector-Emitter
Sustaining Voltage= 100 mAL=25 mH 600 V
VEBO Emitter-Base Voltage
(IC =0) =10 mA 9 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =0.5A IB =0.1A =1A IB =0.2A
VBE(sat)∗ Base-Emitter
Saturation Voltage =0.5A IB =0.1A =1A IB =0.2A
hFE∗ DC Current Gain IC =0.35A VCE =3V =10 mA VCE =5V
INDUCTIVE LOAD
Storage Time
Fall Time =1A VCL= 400V
IB1 =0.2A IB2 =-0.4A= 200 μH
INDUCTIVE LOAD
Storage Time
Fall Time =1A VCL= 400V
IB1 =0.2A IB2 =-0.4A= 200 μHTj= 125oC
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
BUL213
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Safe Operating Areas Current Gain
Collector Emitter Saturation Voltage
Derating Curve Current Gain
Base Emitter Saturation Voltage
BUL213
3/6
Reverse Biased SOA IRBSOA and InductiveLoad Switching Test
Circuits Fast electronic switch Non-inductive Resistor Fast recovery rectifier
BUL213
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 1.27 0.050 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.067 1.14 1.70 0.044 0.067 4.95 5.15 0.194 0.203 2.4 2.7 0.094 0.106 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
Dia.
TO-220 MECHANICAL DATA
P011C
BUL213
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Information furnishedis believedto beaccurateand reliable.However, SGS-THOMSONMicroelectronics assumesno responsabilityforthe
consequencesof useof suchinformationnorforany infringementof patents orother rightsof thirdparties which may results fromits use.No
license isgrantedbyimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned thispublicationare subject tochange withoutnotice.This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronicsproductsare notauthorizedfor useas criticalcomponents inlifesupportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics. 1997SGS-THOMSON Microelectronics -Printedin Italy-All Rights Reserved
SGS-THOMSON MicroelectronicsGROUPOF COMPANIES
Australia- Brazil- Canada- China- France- Germany- Hong Kong-Italy- Japan- Korea -Malaysia -Malta- Morocco-The Netherlands-
Singapore- Spain- Sweden- Switzerland- Taiwan -Thailand- UnitedKingdom- U.S.A.
BUL213
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