BUL312FP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL312FP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF D ..
BUL381 ,Silicon NPN Power Transistors TO-220C packageABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 1300 VV ..
BUL381D ,Silicon NPN Power Transistors TO-220C packageBUL381D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HI ..
BUL382 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL310FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn NPN TRANS ..
BUL382. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORMAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 1000 VCES BEV Collect ..
BUL382D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 800 VV ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL312FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL312FPHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS HORIZONTAL DEFLECTION FOR TV SMPS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
March 2004
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL312FP2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL312FP3/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA
Figure 1: Inductive Load Switching TestCircuit
BUL312FP4/6
BUL312FP5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics – All Rights reserved
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BUL312FP6/6
