BUL310FP ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS ■ HORIZONTAL DEFLECTION FOR COLOURT ..
BUL310FP ,Silicon NPN Power Transistors TO-220F packageBUL310FP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ N ..
BUL310PI , HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL312FP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL312FP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF D ..
BUL381 ,Silicon NPN Power Transistors TO-220C packageABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 1300 VV ..
BUL381D ,Silicon NPN Power Transistors TO-220C packageBUL381D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HI ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL310FP
Silicon NPN Power Transistors TO-220F package
BUL310FPHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
February 2002
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL310FP2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Load Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Load Storage Time
BUL310FP3/6
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit
BUL310FP4/6
BUL310FP5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BUL310FP6/6
