BUL216 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL216®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NP ..
BUL310FP ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS ■ HORIZONTAL DEFLECTION FOR COLOURT ..
BUL310FP ,Silicon NPN Power Transistors TO-220F packageBUL310FP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ N ..
BUL310PI , HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL312FP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL312FP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF D ..
BUL381 ,Silicon NPN Power Transistors TO-220C packageABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 1300 VV ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL216
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL216HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION
TEMPERATURE HIGH RUGGEDNESS
APPLICATIONS ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
June 2001
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL2162/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL2163/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
BUL2164/6
BUL2165/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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BUL2166/6
