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BUL1203EFPSTN/a20avaiHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR


BUL1203EFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203EFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD O ..
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C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A


BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION

The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight hFE range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
November 2003
ABSOLUTE MAXIMUM RATINGS

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curve
BUL1203EFP

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DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Inductive Load Storage Time Inductive Load Fall Time
BUL1203EFP

3/7
Figure 1: Inductive Load Switching Test Circuit
Reverse Biased Safe Operating Area
Figure 2: Resistive Load Switching Test Circuit
BUL1203EFP

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Figure 3: Energy Rating Test Circuit
BUL1203EFP

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BUL1203EFP
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