BUL116D ,MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ COMPACT FLUORESCENT LAMPS UP TO 3 ..
BUL1203E ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203E®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF ..
BUL1203EFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203EFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD O ..
BUL128 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL128®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ NPN ..
BUL128. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: 1■ ELECTRONIC BALLASTS FORFLUORESCE ..
BUL128DB ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: TO-220■ ELECTRONIC BALLASTS FORFLUO ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL116D
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL116DMEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
DESCRIPTION The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
February 2003
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curve
BUL116D2/6
DC Current Gain
Collector-Emitter Saturation Voltage
Switching Time Resistive Load
DC Current Gain
Base-Emitter Saturation Voltage
Switching Time Inductive Load
BUL116D3/6
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.Reverse Biased SOA
BUL116D4/6
BUL116D5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BUL116D6/6
