BUL1102EFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1102EFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF ..
BUL116D ,MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ COMPACT FLUORESCENT LAMPS UP TO 3 ..
BUL1203E ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203E®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF ..
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BUL128. ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: 1■ ELECTRONIC BALLASTS FORFLUORESCE ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUL1102EFP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1102EFPHIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
September 2003
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Areas Derating Curve
BUL1102EFP2/6
DC Current Gain
Collector Emitter Saturation Voltage
Switching Time Resistive Load
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load
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Reverse Biased SOA
Figure 1: Energy Rating Test Circuit
Figure 2: Resistive Load Switching Test Circuit
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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BUL1102EFP6/6
