BUK9Y40-55B ,N-channel Trenchmos (tm) logic level FETApplications■ Automotive systems ■ 12 V and 24 V loads■ Motors, lamps and solenoids ■ General purpo ..
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C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
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BUK9Y40-55B
N-channel Trenchmos (tm) logic level FET
BUK9Y40-55BN-channel TrenchMOS™ logic level FET
Rev. 01 — 28 May 2004 Product dataM3D748
Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Very low on-state resistance � Q101 compliant 175 °C rated � Logic level compatible. Automotive systems � 12 V and 24 V loads Motors, lamps and solenoids � General purpose power switching. EDS(AL)S≤48 mJ � RDSon =34mΩ (typ) ID≤20A � Ptot≤50 W.
Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol1,2,3 source (s)
SOT669 (LFPAK) gate (g) mounting base,
connected to
drain (d)
Top view MBL286
s1 s2s3
MBL798
Philips Semiconductors BUK9Y40-55B
N-channel TrenchMOS™ logic level FET Ordering information Limiting values[1] Maximum value not quoted. Repetitive rating defined in Figure16.
Single-shot avalanche rating limited by Tj(max) of 175°C.
Repetitive avalanche rating limited by Tj(avg) of 170°C.
Refer to /acrobat/applicationnotes/AN10273_1.pdf for further information.
Table 2: Ordering informationBUK9Y40-55B LFPAK Plastic single-ended surface mounted package (Philips version LFPAK); 4
leads
SOT669
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS =20kΩ -55 V
VGS gate-source voltage (DC) - ±15 V drain current (DC) Tmb =25 °C; VGS =5V;
Figure2 and3
-20 A
Tmb= 100 °C; VGS =5V; Figure2 -14 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3
-80 A
Ptot total power dissipation Tmb =25 °C; Figure1 -50 W
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C - 20 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 80 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =20A;
VDS≤55 V; VGS =5V; RGS =50Ω;
starting Tmb =25°C
-48 mJ
EDS(AL)R repetitive drain-source avalanche
energy [1] -
Philips Semiconductors BUK9Y40-55B
N-channel TrenchMOS™ logic level FET
Philips Semiconductors BUK9Y40-55B
N-channel TrenchMOS™ logic level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 3 K/W
Philips Semiconductors BUK9Y40-55B
N-channel TrenchMOS™ logic level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C55 - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1.1 1.5 2 V= 175°C 0.5 - - V= −55°C - - 2.3 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C - 0.02 1 μA= 175°C - - 500 μA
IGSS gate-source leakage current VGS= ±15 V; VDS=0V - 2 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =15A;
Figure7 and8 =25°C - 34 40 mΩ= 175 °C- - 84 mΩ
VGS= 4.5 V; ID =15A - - 45 mΩ
VGS =10V; ID =15A - 32 36 mΩ
Dynamic characteristicsQg(tot) total gate charge VGS =5V; VDD =44V; =15A; Figure14
-11 - nC
Qgs gate-to-source charge - 2 - nC
Qgd gate-to-drain (Miller) charge - 5 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 765 1020 pF
Coss output capacitance - 123 148 pF
Crss reverse transfer capacitance - 71 97 pF
td(on) turn-on delay time VDD=30 V; RL= 2.2Ω;
VGS =5V; RG =10Ω
-17 - ns rise time - 93 - ns
td(off) turn-off delay time - 35 - ns fall time - 72 - ns
Source-drain diodeVSD source-drain (diode forward)
voltage=20 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-45 - ns recovered charge - 25 - nC
Philips Semiconductors BUK9Y40-55B
N-channel TrenchMOS™ logic level FET
