IC Phoenix
 
Home ›  B › B35 > BUK9E06-55A,N-channel TrenchMOS logic level FET
BUK9E06-55A Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BUK9E06-55A |BUK9E0655ANXPN/a3avaiN-channel TrenchMOS logic level FET


BUK9E06-55A ,N-channel TrenchMOS logic level FETApplications„ 12 V and 24 V loads„ Motors, lamps and solenoids„ Automotive and general purpose powe ..
BUK9Y40-55B ,N-channel Trenchmos (tm) logic level FETApplications■ Automotive systems ■ 12 V and 24 V loads■ Motors, lamps and solenoids ■ General purpo ..
BUL1102EFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1102EFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY■ LOW SPREAD OF ..
BUL116D ,MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ COMPACT FLUORESCENT LAMPS UP TO 3 ..
BUL1203E ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203E®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF ..
BUL1203EFP ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORBUL1203EFP®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD O ..
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A

BUK9E06-55A
N-channel TrenchMOS logic level FET
BUK9E06-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010 Product data sheet Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C --55 V drain current VGS =5V; Tj =25°C;
see Figure 3; see Figure 1
[1] --75 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --300 W
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; =25°C
-4.8 5.8 mΩ
VGS =4.5 V; ID =25A; =25°C
--6.7 mΩ
VGS =5V; ID =25A; =25°C;
see Figure 12; see Figure 13
-5.3 6.3 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =75A; Vsup≤55V;
RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped
--1.1 J
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET
[1] Continuous current is limited by package. Pinning information Ordering information
Table 2. Pinning information G gate
SOT226 (I2PAK) D drain source D mounting base; connected to
drain
Table 3. Ordering information
BUK9E06-55A I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --55 V
VDGR drain-gate voltage RGS =20kΩ --55 V
VGS gate-source voltage -15 - 15 V drain current VGS =5V; Tj =25 °C;
see Figure 3; see Figure 1
[1] - - 154 A
[2] --75 A
VGS =5V; Tj= 100 °C; see Figure 1 [2] --75 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed;
see Figure 3 - 616 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 300 W
Tstg storage temperature -55 - 175 °C junction temperature -55 - 175 °C
Source-drain diode source current Tmb =25°C [1] - - 154 A
[2] --75 A
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - - 616 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =75A; Vsup≤55 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
--1.1 J
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET Thermal characteristics Characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance
from junction to
mounting base
see Figure 4 --0.5 K/W
Rth(j-a) thermal resistance
from junction to
ambient
vertical in still air - 60 - K/W
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 55 --V =0.25mA; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 11
11.5 2V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--2.3 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11
0.5 --V
IDSS drain leakage current VDS =55V; VGS =0V; Tj= 175°C - - 500 µA
VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VDS =0V; VGS =10V; Tj=25°C - 2 100 nA
VDS =0V; VGS =-10 V; Tj=25°C - 2 100 nA
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET
RDSon drain-source on-state
resistance
VGS =5V; ID =25A; Tj= 175 °C;
see Figure 12; see Figure 13 - 13.2 mΩ
VGS =10V; ID =25A; Tj =25°C - 4.8 5.8 mΩ
VGS =4.5 V; ID =25A; Tj=25°C --6.7 mΩ
VGS =5V; ID =25A; Tj =25 °C;
see Figure 12; see Figure 13
-5.3 6.3 mΩ
Dynamic characteristics
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 6500 8600 pF
Coss output capacitance - 1000 1200 pF
Crss reverse transfer
capacitance 650 850 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-45 - ns rise time - 180 - ns
td(off) turn-off delay time - 420 - ns fall time - 235 - ns internal drain
inductance
from drain lead 6 mm from package to
centre of die ; Tj =25°C
-4.5 -nH
from upper edge of drain mounting base
to centre of die ; Tj =25°C
-2.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diode
VSD source-drain voltage IS =30A; VGS =0V; Tj =25°C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-80 - ns recovered charge - 200 - nC
Table 6. Characteristics …continued
NXP Semiconductors BUK9E06-55A
N-channel TrenchMOS logic level FET
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED