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C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
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BUK9840-55
N-channel TrenchMOS logic level FET
Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Electrostatically robust due to
integrated protection diodes Low conduction losses due to low
on-state resistance
1.3 Applications Automotive and general purpose
power switching
1.4 Quick reference data
BUK9840-55
N-channel TrenchMOS logic level FET
Rev. 03 — 20 April 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 150°C --55 V drain current Tsp=25°C - - 10.7 A
Ptot total power dissipation Tamb=25°C --1.8 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =5V; ID =5A; Tj=25°C - 30 40 mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =3.6 A; Vsup≤25 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
--60 mJ
NXP Semiconductors BUK9840-55
N-channel TrenchMOS logic level FET Pinning information Ordering information Marking[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering informationBUK9840-55 SOT223 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
Table 4. Marking codesBUK9840-55 94055
NXP Semiconductors BUK9840-55
N-channel TrenchMOS logic level FET Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -10 10 V drain current Tsp=25°C - 10.7 A
Tamb =25°C - 5 A
Tamb= 100°C - 3.1 A
IDM peak drain current Tsp=25 °C; pulsed - 40 A
Ptot total power dissipation Tamb =25°C - 1.8 W
Tsp =25°C - 8.3 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp=25°C - 10.7 A
ISM peak source current pulsed; Tsp =25°C - 40 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =3.6 A; Vsup≤25 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
-60 mJ
Electrostatic dischargeVesd electrostatic discharge voltage HBM; C= 100 pF; R= 1.5kΩ -2 kV
NXP Semiconductors BUK9840-55
N-channel TrenchMOS logic level FET Thermal characteristics
Table 6. Thermal characteristicsRth(j-sp) thermal resistance from
junction to solder point
Mounted on any printed-circuit board - 12 15 K/W
Rth(j-a) thermal resistance from
junction to ambient
Mounted on a printed-circuit - - 70 K/W
NXP Semiconductors BUK9840-55
N-channel TrenchMOS logic level FET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj=25°C 55 --V =0.25mA; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 150°C 0.6 - - V =1mA; VDS =VGS; Tj= -55°C --2.3 V =1mA; VDS =VGS; Tj =25°C 1 1.5 2 V
IDSS drain leakage current VDS =55V; VGS =0V; Tj= 150°C - - 100 µA
VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =5V; VDS =0V; Tj=25°C - 0.02 1 µA
VGS =-5 V; VDS =0V; Tj=25°C - 0.02 1 µA
VGS =5V; VDS =0V; Tj= 150°C --5 µA
VGS =-5 V; VDS =0V; Tj= 150°C - - 5 µA
RDSon drain-source on-state
resistance
VGS =5V; ID =5A; Tj= 150°C --74 mΩ
VGS =5V; ID =5A; Tj=25°C - 30 40 mΩ
V(BR)GSS gate-source
breakdown voltage
VDS =0V; Tj =25 °C; IG=1 mA 10 --V
VDS =0V; Tj =25 °C; IG=-1 mA 10 --V
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C 1050 1400 pF
Coss output capacitance - 205 245 pF
Crss reverse transfer
capacitance 110 150 pF
td(on) turn-on delay time VDS =30V; RL =3.3 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25 °C; ID =9A 1725ns rise time - 65 100 ns
td(off) turn-off delay time - 70 105 ns fall time - 70 105 ns
gfs transfer conductance VDS =25V; ID =5A; Tj =25°C 11 19 - S
Source-drain diodeVSD source-drain voltage IS =5A; VGS =0V; Tj=25°C - 0.85 1.1 V
trr reverse recovery time IS =5A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-45 -ns recovered charge - 0.3 - µC
NXP Semiconductors BUK9840-55
N-channel TrenchMOS logic level FET