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BUK98180-100A
TrenchMOS TM logic level FET
BUK98180-100A renchMOS™ logic level FET
Rev. 02 — 18 May 2001 Product data DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK98180-100A in SOT223 (SC-73).
Features TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible.
Applications Automotive and general purpose power switching 12V,24 V and 42 V loads Motors, lamps and solenoids.
Pinning information TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol gate (g)
SOT223 (SC-73) drain (d) source (s) drain (d)
MSB002 - 1Top view s
MBB076
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) − 100 V drain current (DC) Tsp =25 °C; VGS =5V − 4.6 A
Ptot total power dissipation Tsp =25°C − 8W junction temperature − 150 °C
RDSon drain-source on-state resistance Tj =25 °C; VGS =5V; ID=5A 153 180 mΩ =25 °C; VGS= 4.5 V; ID =5A − 201 mΩ =25 °C; VGS=10 V; ID = 5A 147 173 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) − 100 V
VDGR drain-gate voltage (DC) RGS =20kΩ− 100 V
VGS gate-source voltage (DC) −±10 V
VGSM non-repetitive gate-source voltage tp≤50μs −±15 V drain current (DC) Tsp =25 °C; VGS =5V; Figure2 and3 − 4.6 A
Tsp= 100 °C; VGS =5V; Figure2 − 3A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs;
Figure3 18 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 8W
Tstg storage temperature −55 +150 °C operating junction temperature −55 +150 °C
Source-drain diodeIDR reverse drain current (DC) Tsp =25°C − 4.6 A
IDRM pulsed reverse drain current Tsp =25 °C; pulsed; tp≤10μs − 18 A
Avalanche ruggednessWDSS non-repetitive avalanche energy unclamped inductive load; ID =4A;
VDS≤ 100 V; VGS =5V; RGS =50Ω;
starting Tsp =25°C 16 mJ
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient 70 K/W
Rth(j-sp) thermal resistance from junction to solder
point
Figure4 15 K/W
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25°C 100 −− V= −55 °C89 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1 1.5 2 V= 150°C 0.6 −− V= −55°C −− 2.3 V
IDSS drain-source leakage current VDS= 100 V; VGS =0V =25°C − 0.05 10 μA= 150°C −− 500 μA
IGSS gate-source leakage current VGS= ±10 V; VDS =0V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =5A;
Figure7 and8 =25°C − 153 180 mΩ= 150°C −− 389 mΩ
VGS= 4.5 V; ID =5A; −− 201 mΩ
VGS =10V; ID =5A; − 147 173 mΩ
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 464 619 pF
Coss output capacitance − 60 72 pF
Crss reverse transfer capacitance − 36 50 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =5V; RG =10Ω 7 − ns rise time − 89 − ns
td(off) turn-off delay time − 18 − ns fall time − 25 − ns
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET
Source-drain diodeVSD source-drain (diode forward)
voltage=5 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V 49 − ns recovered charge − 130 − nC
Table 5: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BUK98180-100A
TrenchMOS™ logic level FET
