N-channel TrenchMOS logic level FET# Technical Documentation: BUK96180100A Power MOSFET
Manufacturer : PH (Philips Semiconductors / Nexperia)
Component Type : N-channel TrenchMOS™ logic level FET
Package : TO-220 (single)
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## 1. Application Scenarios
### Typical Use Cases
The BUK96180100A is a 100V, 80A N-channel MOSFET designed for high-current switching applications where low gate drive requirements and efficient power handling are critical. Its primary use cases include:
- DC-DC Converters : Particularly in synchronous buck converters for intermediate voltage rails (24V-48V input systems)
- Motor Drive Circuits : Brushed DC motor control in industrial equipment, automotive auxiliary systems, and robotics
- Power Management Systems : Load switching, hot-swap protection, and OR-ing applications in server/telecom power supplies
- Battery Management Systems : Discharge protection and charging control in high-capacity lithium battery packs
- Solid-State Relays : Replacement of mechanical relays in high-cycle applications
### Industry Applications
- Industrial Automation : PLC output modules, motor controllers, and actuator drives
- Automotive Electronics : Electric power steering pumps, cooling fan controllers, and 48V mild-hybrid systems
- Telecommunications : Base station power amplifiers and backup power switching
- Renewable Energy : Solar charge controllers and small wind turbine regulators
- Consumer Electronics : High-end audio amplifiers and uninterruptible power supplies (UPS)
### Practical Advantages
- Low Gate Threshold Voltage (VGS(th) = 2-3V): Enables direct drive from 3.3V/5V microcontrollers without gate drivers
- Low On-Resistance (RDS(on) = 8.5mΩ typical): Minimizes conduction losses in high-current paths
- Fast Switching Characteristics (td(on) = 15ns typical): Suitable for PWM applications up to 200kHz
- Avalanche Rated : Robust against inductive load switching transients
- Logic Level Compatible : Simplifies drive circuitry compared to standard-level MOSFETs
### Limitations
- Thermal Constraints : TO-220 package limits continuous power dissipation to approximately 75W without heatsinking
- Voltage Margin : 100V rating provides limited overhead in 48V systems with significant transients
- Gate Sensitivity : ESD sensitive (ESD class 1C) requiring careful handling during assembly
- Parasitic Capacitance : Moderate Ciss (4500pF typical) may cause gate drive challenges at very high frequencies
- Single-Die Construction : Not suitable for paralleling without careful current sharing considerations
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## 2. Design Considerations
### Common Design Pitfalls and Solutions
| Pitfall | Consequence | Solution |
|---------|-------------|----------|
| Insufficient Gate Drive | Slow switching, excessive heating | Use dedicated gate driver IC with 2-4A peak capability |
| Poor Thermal Management | Premature thermal shutdown or failure | Implement proper heatsinking (Rth(j-a) < 2.5°C/W for full current) |
| Voltage Spikes from Inductive Loads | Avalanche breakdown, device failure | Add snubber circuits or use faster freewheeling diodes |
| ESD Damage During Handling | Latent failures, reduced reliability | Implement ESD-safe assembly procedures and storage |
| PCB Trace Resistance | Additional power loss, thermal issues | Use adequate copper weight (≥2oz) and wide traces |
### Compatibility Issues
- Gate Driver Compatibility : Compatible with most logic-level gate drivers (TC442x, UCC2752x families)
- Microcontroller Interfaces : Direct connection possible with 5V MCUs; 3.3V MCUs
