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BUK9608-55A |BUK960855APHN/a265avaiN-channel TrenchMOS logic level FET
BUK9608-55A |BUK960855APHILIPSN/a630avaiN-channel TrenchMOS logic level FET
BUK9608-55A |BUK960855APHIN/a4336avaiN-channel TrenchMOS logic level FET


BUK9608-55A ,N-channel TrenchMOS logic level FET
BUK9608-55A ,N-channel TrenchMOS logic level FETApplications„ 12 V and 24 V loads„ Motors, lamps and solenoids„ Automotive and general purpose powe ..
BUK9608-55A ,N-channel TrenchMOS logic level FET
BUK9609-40B ,TrenchMOS (tm) logic level FETApplications■ Automotive systems ■ 12 V loads■ Motors, lamps and solenoids ■ General purpose power ..
BUK9609-55A ,TrenchMOS(TM) logic level FETApplications■ Automotive and general purpose power switching:◆ 12 V and 24 V loads◆ Motors, lamps a ..
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BUK9608-55A
N-channel TrenchMOS logic level FET
Product profile1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK9608-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 January 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 55 V drain current VGS =5V; Tmb =25°C;
see Figure 1; see Figure 3
[1] --75 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --253 W
Static characteristics
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25°C
-6.4 7.5 mΩ
VGS =4.5 V; ID =25A; =25°C
--8.5 mΩ
VGS =5V; ID =25A; =25°C; see Figure 11;
see Figure 12
-6.8 8 mΩ
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET
[1] Continuous current is limited by package. Pinning information
[1] It is not possible to make a connection to pin 2. Ordering information
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy =75A; Vsup≤55V;
RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped
--670 mJ
Dynamic characteristics
QGD gate-drain charge VGS =5V; ID =25A;
VDS =44V; Tj =25°C;
see Figure 13
-43 - nC
Table 1. Quick reference data …continued
Table 2. Pinning information G gate
SOT404 (D2PAK) D drain[1] source D mounting base; connected to drain
Table 3. Ordering information
BUK9608-55A D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -15 15 V drain current Tmb =25°C; VGS =5V; see Figure 1;
see Figure 3
[1]- 125 A
[2] -75 A
Tmb =100 °C; VGS =5V; see Figure 1 [2] -75 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs; see Figure 3 - 503 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 253 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1]- 125 A
[2] -75 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 503 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy =75A; Vsup≤55 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped 670 mJ
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction
to mounting base
see Figure 4 --0.59 K/W
Rth(j-a) thermal resistance from junction
to ambient
mounted on a printed-circuit board;
minimum footprint
-50 - K/W
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0 V; Tj=25°C 55 --V= 0.25 mA; VGS =0 V; Tj= -55°C 50 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10
11.5 2V =1mA; VDS =VGS; Tj =175 °C;
see Figure 10
0.5 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--2.3 V
IDSS drain leakage current VDS =55 V; VGS =0 V; Tj= 175°C - - 500 µA
VDS =55 V; VGS =0 V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =10V; VDS =0 V; Tj=25°C - 2 100 nA
VGS =-10 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj =25°C - 6.4 7.5 mΩ
VGS =5V; ID =25A; Tj= 175 °C;
see Figure 11; see Figure 12
--16 mΩ
VGS =4.5 V; ID =25A; Tj=25°C --8.5 mΩ
VGS =5V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-6.8 8 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =44 V; VGS =5V; =25°C; see Figure 13
-92 - nC
QGS gate-source charge - 11 - nC
QGD gate-drain charge - 43 - nC
Ciss input capacitance VGS =0V; VDS= 25V; f= 1MHz; =25°C; see Figure 14 4551 6021 pF
Coss output capacitance - 760 900 pF
Crss reverse transfer capacitance - 500 687 pF
td(on) turn-on delay time VDS =30 V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-40 - ns rise time VDS =30 V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj 25°C 175 - ns
td(off) turn-off delay time VDS =30 V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C 280 - ns fall time - 167 - ns internal drain inductance from drain lead 6 mm from package
to centre of die; Tj =25°C
-4.5 -nH
from upper edge of drain mounting
base to centre of die; Tj =25°C
-2.5 -nH internal source inductance from source lead to source bond
pad ; Tj =25°C
-7.5 -nH
NXP Semiconductors BUK9608-55A
N-channel TrenchMOS logic level FET
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =75A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =25V; Tj =25°C
-70 - ns recovered charge - 170 - nC
Table 6. Characteristics …continued
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