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BUK9509-75A
N-channel TrenchMOS logic level FET
BUK9509-75A
N-channel TrenchMOS logic level FET
Rev. 03 — 22 September 2008 Product data sheet Product profile
1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V, 24 V and 42 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 75 V drain current VGS =5V; Tj =25°C; see
Figure 3; see Figure 1
--75 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 230 W
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =75 A; Vsup≤75V;
RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped - 562 mJ
Static characteristicsRDSon drain-source
on-state resistance
VGS= 4.5 V; ID =25A; =25°C
--9.95 mΩ
VGS =5V; ID =25A; =25 °C; see Figure 12;
see Figure 15
-7.6 9 mΩ
NXP Semiconductors BUK9509-75A
N-channel TrenchMOS logic level FET Pinning information Ordering information Limiting values
Table 2. Pinning information gate
SOT78A
(TO-220AB; SC-46) drain source D mounting base; connected to
drain
Table 3. Ordering informationBUK9509-75A TO-220AB;
SC-46
Plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78A
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 75 V
VDGR drain-gate voltage RGS =20kΩ -75 V
VGS gate-source voltage -10 10 V drain current VGS =5V; Tj= 100 °C; see Figure 1 -65 A
VGS =5V; Tj =25 °C; see Figure 3; see Figure 1 -75 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed; see Figure 3 -440 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -230 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
VGSM peak gate-source
voltage
pulsed; tp≤50µs -15 15 V
Source-drain diode source current Tmb =25°C - 75 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 440 A
NXP Semiconductors BUK9509-75A
N-channel TrenchMOS logic level FET
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche
energy =75A; Vsup≤75 V; RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped
-562 mJ
Table 4. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors BUK9509-75A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - - 0.65 K/W
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
NXP Semiconductors BUK9509-75A
N-channel TrenchMOS logic level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =25°C 75 - - V =0.25mA; VGS =0V; Tj =-55°C 70 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C; see
Figure 6
11.5 2 V =1mA; VDS = VGS; Tj= 175 °C; see
Figure 6
0.5 - - V =1mA; VDS = VGS; Tj =-55 °C; see
Figure 6
--2.3 V
IDSS drain leakage current VDS =75V; VGS =0V; Tj= 175°C - - 500 µA
VDS =75V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VDS =0V; VGS =10V; Tj=25°C - 2 100 nA
VDS =0V; VGS =-10 V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =25A; Tj=25°C --9.95 mΩ
VGS =5V; ID =25A; Tj= 175 °C; see
Figure 12; see Figure 15
--18.9 mΩ
VGS =10V; ID =25A; Tj=25°C - 7.23 8.5 mΩ
VGS =5V; ID =25A; Tj =25°C; see
Figure 12; see Figure 15
-7.6 9 mΩ
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C; see Figure 14 6631 8840 pF
Coss output capacitance - 905 1090 pF
Crss reverse transfer
capacitance 610 840 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-47 - ns rise time - 185 - ns
td(off) turn-off delay time - 424 - ns fall time - 226 - ns internal drain
inductance
from contact screw on mounting base to
centre of die; Tj =25°C
-3.5 - nH
from drain lead 6 mm from package to
centre of die; Tj =25°C
-4.5 - nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 - nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C; see
Figure 13 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =-10V;
VDS =30V; Tj =25°C 70.3 - ns recovered charge - 213 - nC
NXP Semiconductors BUK9509-75A
N-channel TrenchMOS logic level FET
