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BUK9506-55B-BUK9606-55B
TrenchMOS(TM) logic level FET
BUK95/96/9E06-55B renchMOS™ logic level FET
Rev. 02 — 10 October 2002 Product data Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
Philips High-Performance Automotive T renchMOS™ technology, featuring very low
on-state resistance.
Product availability:
BUK9506-55B in SOT78 (TO-220AB); BUK9606-55B in SOT404 (D2 -PAK);
BUK9E06-55B in SOT226 (I2 -PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information TrenchMOS™ technology � Q101 compliant 175 °C rated � Logic level compatible. Automotive systems � 12 V and 24 V loads Motors, lamps and solenoids � General purpose power switching. EDS(AL)S= 679 mJ (max) � RDSon= 5.1 mΩ (typ) ID=75A (max) � Ptot= 258 W (max)
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outlines and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) SOT226 (I2 -PAK) drain (d) [1] source (s) mounting base,
connected to
drain (d)
MBK106
MBK112
123MBB076
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET[1] It is not possible to make connection to pin 2 of the SOT404 package.
Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS =20kΩ -55 V
VGS gate-source voltage (DC) - ±15 V drain current (DC) Tmb =25 °C; VGS =5V;
Figure2 and3
[1]- 146 A
[2] -75 A
Tmb= 100 °C; VGS =5V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 587 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 258 W
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C [1]- 146 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 587 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS≤55 V; VGS =5V; RGS =50Ω;
starting Tmb =25°C 679 mJ
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
Figure4 - - 0.58 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT78 (TO-220AB) and SOT226 (I2 -PAK) vertical in still air - 60 - K/W
SOT404 (D2 -PAK) minimum footprint; mounted on a PCB - 50 - K/W
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C55 - - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1.1 1.5 2 V= 175°C 0.5 - - V= −55°C - - 2.3 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C - 0.02 1 μA= 175°C - - 500 μA
IGSS gate-source leakage current VGS= ±10 V; VDS=0V - 2 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =25A;
Figure7 and8 =25°C - 5.1 6.0 mΩ= 175 °C- - 12 mΩ
VGS= 4.5 V; ID =25A - - 6.4 mΩ
VGS =10V; ID=25A - 4.8 5.4 mΩ
Dynamic characteristicsQg(tot) total gate charge VGS =5V; VDD =44V; =25A; Figure14
-60 - nC
Qgs gate-to-source charge - 11 - nC
Qgd gate-to-drain (Miller) charge - 22 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 5674 7565 pF
Coss output capacitance - 755 906 pF
Crss reverse transfer capacitance - 255 349 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =5V; RG =10Ω
-37 - ns rise time - 95 - ns
td(off) turn-off delay time - 177 - ns fall time - 106 - ns internal drain inductance from drain lead 6 mm from
package to centre of die 4.5 - nH
from contact screw on
mounting base to centre of
die SOT78 3.5 - nH
from upper edge of drain
mounting base to centre of
die SOT404/SOT226 2.5 - nH internal source inductance from source lead to source
bond pad 7.5 - nH
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET
Source-drain diodeVSD source-drain (diode forward)
voltage=40 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-64 - ns recovered charge - 79 - nC
Table 4: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET
Philips Semiconductors BUK95/96/9E06-55B
TrenchMOS™ logic level FET
