BUK9230-100B ,N-channel TrenchMOS logic level FETGeneral descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasti ..
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BUK9245-55A ,N-channel TrenchMOS logic level FET
BUK9245-55A ,N-channel TrenchMOS logic level FET
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BUK9230-100B
N-channel TrenchMOS logic level FET
Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK9230-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 185°C - - 100 V drain current VGS =5V; Tmb =25°C;
see Figure 1; see Figure 3
--47 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --167 W
Static characteristicsRDSon drain-source on-state resistance VGS =10V; ID =25A; Tj=25°C - 24 28 mΩ
VGS =5V; ID =25A; Tj =25 °C; see Figure 9; see Figure 13 - 2530mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =47A; Vsup≤ 100V;
RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped
--150 mJ
Dynamic characteristicsQGD gate-drain charge VGS =5V; ID =25A; VDS =80V; Tj =25°C; see Figure 10 -13 - nC
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET Pinning information[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Ordering information
Table 2. Pinning information G gate
SOT428 (DPAK) D drain[1] source D mounting base; connected to drain
Table 3. Ordering informationBUK9230-100B DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 185°C - 100 V
VDGR drain-gate voltage RGS =20kΩ - 100 V
VGS gate-source voltage -15 15 V drain current Tmb= 100 °C; VGS =5 V; see Figure 1 -33 A
Tmb =25 °C; VGS=5 V; see Figure 1;
see Figure 3
-47 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 185 A
Ptot total power dissipation Tmb =25 °C; see Figure 2 - 167 W
Tstg storage temperature -55 185 °C junction temperature -55 185 °C
Source-drain diode source current Tmb =25°C - 47 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 185 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =47A; Vsup≤ 100 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped 150 mJ
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 --0.95 K/W
Rth(j-a) thermal resistance from junction to
ambient 71.4 - K/W
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V; Tj= -55°C 89 - - V= 0.25 mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 185 °C;
see Figure 8
0.4 --V =1mA; VDS =VGS; Tj =25 °C;
see Figure 8
1.1 1.5 2 V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 8
--2.3 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 185°C - - 500 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.02 1 µA
IGSS gate leakage current VGS =15V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-15 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID =25 A; Tj =185 °C;
see Figure 9; see Figure 13
--78 mΩ
VGS =10V; ID =25A; Tj=25°C - 24 28 mΩ
VGS =4.5 V; ID =25 A; Tj=25°C --33 mΩ
VGS =5V; ID =25 A; Tj =25 °C;
see Figure 9; see Figure 13 2530mΩ
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =80V; VGS =5V; =25 °C; see Figure 10
-33 - nC
QGS gate-source charge - 7 - nC
QGD gate-drain charge - 13 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25 °C; see Figure 11 2854 3805 pF
Coss output capacitance - 232 278 pF
Crss reverse transfer capacitance - 81 110 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-30 - ns rise time - 86 - ns
td(off) turn-off delay time - 96 - ns fall time - 46 - ns internal drain inductance measured from drain to center of die; =25°C
-2.5 -nH internal source inductance measured from source lead to source
bond pad ; Tj =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 12 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30V; Tj =25°C
-114 -ns recovered charge - 196 - nC
NXP Semiconductors BUK9230-100B
N-channel TrenchMOS logic level FET
