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BUK9214-30A
N-channel TrenchMOS logic level FET
Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK9214-30A
N-channel TrenchMOS logic level FET
Rev. 3 — 14 June 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --30 V drain current VGS =5 V; Tmb =25°C; see Figure 1;
see Figure 3
--63 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 107 W
Static characteristicsRDSon drain-source on-state
resistance
VGS= 4.5 V; ID =25A; Tj=25°C - - 15.5 mΩ
VGS =10 V; ID =25A; Tj =25°C - 9 12 mΩ
VGS =5 V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-11 14 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =5 V; ID =25A; VDS =24V; =25°C; see Figure 13 12.2 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =63A; Vsup≤30 V; RGS =50Ω;
VGS =5 V; Tj(init)=25 °C; unclamped - 230 mJ
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET Pinning information Ordering information Marking
Table 2. Pinning information
Table 3. Ordering informationBUK9214-30A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
Table 4. Marking codesBUK9214-30A BUK9214-30A
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage RGS =20kΩ -30 V
VGS gate-source voltage -15 15 V drain current Tmb =25°C; VGS =5 V; see Figure 1; see Figure 3 -63 A
Tmb= 100 °C; VGS =5V; see Figure 1 -45 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs; see Figure 3 - 253 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 107 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 63 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 253 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =63A; Vsup≤30 V; RGS =50 Ω; VGS =5V;
Tj(init)=25 °C; unclamped 230 mJ
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 6. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure 4 --1.4 K/W
Rth(j-a) thermal resistance from junction to ambient - 71.4 - K/W
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage =0.25mA; VGS =0V; Tj=25°C 30 --V =0.25mA; VGS =0V; Tj= -55°C 27 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10
11.5 2V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--2.3 V =1mA; VDS =VGS; Tj =175 °C;
see Figure 10
0.5 --V
IDSS drain leakage current VDS =30V; VGS =0V; Tj= 175°C - - 500 µA
VDS =30V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-10 V; VDS =0 V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =25A; Tj=25°C - - 15.5 mΩ
VGS =10V; ID =25A; Tj =25°C - 9 12 mΩ
VGS =5V; ID =25A; Tj= 175 °C;
see Figure 11; see Figure 12 - 26.6 mΩ
VGS =5V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-11 14 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =24V; VGS =5V; =25 °C; see Figure 13
-31 -nC
QGS gate-source charge - 5.3 - nC
QGD gate-drain charge - 12.2 - nC
Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; =25 °C; see Figure 14 1730 2317 pF
Coss output capacitance - 400 481 pF
Crss reverse transfer capacitance - 260 365 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-10 -ns rise time - 85 - ns
td(off) turn-off delay time - 94 - ns fall time - 108 - ns internal drain inductance from drain to centre of die ; Tj=25°C - 2.5 - nH internal source inductance from source lead to source bond
pad; Tj =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =20 A; VGS =0V; Tj =25 °C;
see Figure 15 0.85 1.2 V
trr reverse recovery time IS =20 A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-83 -ns recovered charge - 119 - nC
NXP Semiconductors BUK9214-30A
N-channel TrenchMOS logic level FET
