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BUK7C10-75AITE
TrenchPLUS standard level FET
BUK7C10-75AITE renchPLUS standard level FET
Rev. 01 — 25 July 2002 Product data Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance. Also includes
TrenchPLUS current sensing, and diodes for ESD and temperature protection.
Product availability:
BUK7C10-75AITE in SOT427(D2 -PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Q101 compliant � Integrated temperature sensor ESD protection � Integrated current sensor. Variable Valve Timing for engines � Electrical Power Assisted Steering Automotive and power switching � Fan control. VDS≤75V � VF= 658 mV (typ) ID≤ 114A � SF= −1.54 mV/K (typ) RDSon= 8.8 mΩ (typ) � ID/Isense= 500 (typ).
Table 1: Pinning - SOT427 simplified outline and symbol gate (g) 5 cathode (k)
SOT427(D2 -PAK)2Isense 6 Kelvin source anode (a) 7 source (s) drain (d) mounting base;
connected to
drain (d) Front view MBK128
MBL362Isense Kelvin source
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 75 V
VDGS drain-gate voltage (DC) - 75 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]- 114 A
[2] -75 A
Tmb= 100 °C; VGS =10V; Figure2 [2] -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 456 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA=5 ms;δ= 0.01 - 50 mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage ±100 V
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C [1]- 114 A
[2] -75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs - 456 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load;ID =75A;
VDS≤75 V; VGS =10V;
RGS =50 Ω; starting Tj =25°C 739 mJ
Electrostatic dischargeVesd electrostatic discharge voltage; pins
1,2,4,6,7
Human Body Model; C= 100 pF;= 1.5kΩ kV
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-a) thermal resistance from junction to
ambient
mounted on printed circuit board;
minimum footprint - 50 K/W
Rth(j-mb) thermal resistance from junction to
mounting base
Figure4 - - 0.55 K/W
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C75 - - V= −55 °C70 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS=75 V; VGS =0V =25°C - 0.1 10 μA= 175°C - - 250 μA
V(BR)GSS gate-source breakdown
voltage=±1 mA;
−55 °C
IGSS gate-source leakage current VGS= ±10 V; VDS =0V =25°C - 22 1000 nA= 175 °C- - 10 μA
RDSon drain-source on-state
resistance
VGS =10V; ID =50A;
Figure7 and8 =25°C - 8.8 10 mΩ= 175 °C- - 21 mΩ forward voltage, temperature
sense diode
IF= 250μA 648 658 668 mV temperature coefficient
temperature sense diode
IF= 250 μA;
−55 °C−1.4 −1.54 −1.68 mV/K
Vhys forward voltage hysteresis
temperature sense diode
125 μAID/Isense ratioof drain currentto sense
current
VGS >10V;
−55 °C450 500 550
Dynamic characteristics
Qg(tot) total gate charge VGS= 10V; VDS =60V; =25A; Figure14 121 - nC
Qgs gate-source charge - 20 - nC
Qgd gate-drain (Miller) charge - 44 - nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 4700 - pF
Coss output capacitance - 800 - pF
Crss reverse transfer capacitance - 455 - pF
td(on) turn-on delay time VDS=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω
-35 - nS rise time - 108 - nS
td(off) turn-off delay time - 185 - nS fall time - 100 - nS
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET internal drain inductance measured from upper edge
of drain mounting base to
centre of die 2.5 - nH internal source inductance measured from source lead
to source bond pad 7.5 - nH
Source-drain diode
VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure18 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V
-75 - ns recovered charge - 270 - nC
Table 4: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET
Philips Semiconductors BUK7C10-75AITE
TrenchPLUS standard level FET
