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BUK7907-55ATE
N-channel TrenchPLUS standard level FET
BUK7907-55A TE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits Allows responsive temperature
monitoring due to integrated
temperature sensor Q101 compliant Electrostatically robust due to
integrated protection diodes Low conduction losses due to low
on-state resistance
1.3 Applications 12 V and 24 V high power motor
drives Automotive and general purpose
power switching Electrical Power Assisted Steering
(EPAS) Protected drive for lamps
1.4 Quick reference data
[1] Current is limited by power dissipation chip rating.
Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 55 V drain current VGS =10V; Tmb=25 °C; see Figure 2; see Figure 3 [1]- - 140 A
Ptot total power dissipation Tmb=25 °C; see Figure 1 - - 272 W junction temperature -55 - 175 °C
RDSon drain-source on-state
resistance
VGS =10V; ID =50 A; Tj= 175 °C; see Figure 7;
see Figure 8 14 mΩ
VGS =10V; ID =50 A; Tj =25°C; see Figure 7;
see Figure 8
-5.8 7 mΩ
SF(TSD) temperature sense diode
temperature coefficient= 250 µA; Tj >-55 °C; Tj< 175°C -1.4 -1.54 -1.68 mV/K
VF(TSD) temperature sense diode
forward voltage= 250 µA; Tj=25°C 648 658 668 mV
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET Pinning information Ordering information
Table 2. Pinning information gate
SOT263B
(TO-220) A anode drain K cathode source D mounting base; connected to
drain245
Table 3. Ordering information
BUK7907-55ATE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead
TO-220
SOT263B
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10V; see Figure 2;
see Figure 3;
[1] - 140 A
[2] -75 A
Tmb= 100 °C; VGS =10V; see Figure 2 [2] -75 A
IDM peak drain current Tmb =25°C; tp≤10 µs; pulsed; see Figure 3 - 560 A
Ptot total power dissipation Tmb =25°C; see Figure 1 - 272 W
IGS(CL) gate-source clamping
current
pulsed; tp =5ms; δ =0.01 - 50 mA
continuous - 10 mA
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
-100 100 V
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
VDGS drain-gate voltage - 55 V
Source-drain diode source current Tmb =25°C; [1] - 140 A
[2] -75 A
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - 560 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy =68A; Vsup≤55 V; RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped 460 mJ
Electrostatic Discharge
Vesd electrostatic discharge
voltage
HBM; C=100pF; R=1.5kΩ -6 kV
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - - 0.55 K/W
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage =0.25mA; VGS =0V; Tj =25°C 55 - - V =0.25mA; VGS =0V; Tj =-55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C;
see Figure 9 4V =1mA; VDS = VGS; Tj= 175 °C;
see Figure 9 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 9 4.4 V
IDSS drain leakage current VDS =55V; VGS =0V; Tj =25°C - 0.1 10 µA
VDS =55V; VGS =0V; Tj= 175°C - - 250 µA
V(BR)GSS gate-source breakdown
voltage =1mA; VDS =0V; Tj >-55 °C; < 175°C 22 - V =-1mA; VDS =0V; Tj >-55 °C; < 175°C 22 - V
IGSS gate leakage current VDS =0V; VGS =10V; Tj=25°C - 22 1000 nA
VDS =0V; VGS =-10 V; Tj=25°C - 22 1000 nA
VDS =0V; VGS =10V; Tj= 175°C - - 10 µA
VDS =0V; VGS =-10 V; Tj= 175°C - - 10 µA
RDSon drain-source on-state
resistance
VGS =10 V; ID =50A; Tj =25°C;
see Figure 7; see Figure 8
-5.8 7 mΩ
VGS =10 V; ID =50A; Tj= 175 °C;
see Figure 7; see Figure 8 14 mΩ
VF(TSD) temperature sense diode
forward voltage= 250 µA; Tj=25°C 648 658 668 mV
SF(TSD) temperature sense diode
temperature coefficient= 250 µA; Tj >-55 °C; Tj< 175°C -1.4 -1.54 -1.68 mV/K
VF(TSD)hys temperature sense diode
forward voltage hysteresis> 125 µA; IF< 250 µA; Tj =25°C 25 32 50 mV
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =25V; VGS =10V; =25°C; see Figure 14
-116 -nC
QGS gate-source charge - 19 - nC
QGD gate-drain charge - 50 - nC
Ciss input capacitance VGS =0 V; VDS =25V; f=1MHz; =25°C; see Figure 12
-4500 - pF
Coss output capacitance - 960 - pF
Crss reverse transfer
capacitance
-510 -pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-36 - ns rise time - 115 - ns
td(off) turn-off delay time - 159 - ns
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET internal drain inductance from upper edge of drain mounting base to
center of die; Tj =25°C
-2.5 -nH internal source inductance from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C;
see Figure 17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =-10V;
VDS =30V; Tj =25°C
-80 - ns recovered charge - 200 - nC
Table 6. Characteristics …continued
NXP Semiconductors BUK7907-55ATE
N-channel TrenchPLUS standard level FET

Partno	Mfg	Dc	Qty	Available	Descript
BUK7907-55ATE \|BUK790755ATE	NXP	N/a	995	avai	N-channel TrenchPLUS standard level FET