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BUK7635-55A
N-channel TrenchMOS standard level FET
Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK7635-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 27 January 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --55 V drain current VGS =10V; Tmb =25°C;
see Figure 1; see Figure 3
--35 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --85 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =20A; Tj =25°C;
see Figure 11; see Figure 12 3035mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy =14A; Vsup≤55V;
RGS =50 Ω; VGS =10V;
Tj(init)=25 °C; unclamped
--49 mJ
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET Pinning information Ordering information Limiting values
Table 2. Pinning information G gate
SOT404 (D2PAK) D drain source D mounting base; connected to
drain
Table 3. Ordering informationBUK7635-55A D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -20 20 V drain current Tmb =25°C; VGS =10 V; see Figure 1;
see Figure 3
-35 A
Tmb= 100 °C; VGS=10 V; see Figure 1 -25 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 3 139 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -85 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 35 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 139 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =14A; Vsup≤55 V; RGS =50Ω;
VGS =10 V; Tj(init)=25 °C; unclamped
-49 mJ
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting base
see Figure 4 --1.7 K/W
Rth(j-a) thermal resistance from
junction to ambient
mounted on a printed-circuit board;
minimum footprint
-50 - K/W
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 A; VGS =0V; Tj=25°C 55 --V= 0.25 A; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25 °C;
see Figure 10
234V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.4 V
IDSS drain leakage current VDS =55 V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =55 V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =20 V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10 V; ID =20A; Tj= 175 °C;
see Figure 11; see Figure 12
--70 mΩ
VGS =10 V; ID =20A; Tj =25°C;
see Figure 11; see Figure 12 3035mΩ
Dynamic characteristicsCiss input capacitance VGS =0 V; VDS =25V; f=1MHz; =25°C; see Figure 13 650 872 pF
Coss output capacitance - 170 205 pF
Crss reverse transfer
capacitance 110 153 pF
td(on) turn-on delay time VDS =30 V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω; Tj =25°C
-10 - ns rise time - 62 - ns
td(off) turn-off delay time - 24 - ns fall time - 20 - ns internal drain inductance from drain lead 6 mm from package to
centre of die; Tj =25°C
-4.5 -nH
from upper edge of drain mounting base
to centre of die; Tj =25°C
-2.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 14 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30V; Tj =25°C
-40 - ns recovered charge - 80 - nC
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET
NXP Semiconductors BUK7635-55A
N-channel TrenchMOS standard level FET
