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BUK7626-100B from PHILIPS

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23.438ms

BUK7626-100B

Manufacturer: PHILIPS

N-channel TrenchMOS standard level FET

Partnumber Manufacturer Quantity Availability
BUK7626-100B,BUK7626100B PHILIPS 800 In Stock

Description and Introduction

N-channel TrenchMOS standard level FET **Introduction to the BUK7626-100B Electronic Component**  

The BUK7626-100B is a high-performance power MOSFET developed by Philips, designed for efficient switching applications in power management systems. This N-channel enhancement-mode device is built using advanced semiconductor technology, offering low on-state resistance (RDS(on)) and high current-handling capabilities.  

With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of up to 75A, the BUK7626-100B is well-suited for demanding applications such as DC-DC converters, motor control, and power supplies. Its robust construction ensures reliable operation under high-stress conditions, making it a preferred choice for industrial and automotive electronics.  

Key features include fast switching speeds, low gate charge, and excellent thermal performance, which contribute to reduced power losses and improved system efficiency. The component is housed in a TO-220AB package, providing mechanical durability and ease of mounting on heat sinks for effective thermal dissipation.  

Engineers value the BUK7626-100B for its balance of performance, reliability, and cost-effectiveness, making it a versatile solution for modern power electronics designs. Its specifications align with industry standards, ensuring compatibility with a wide range of circuit configurations.

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