BUK7610-100B Fast Delivery |IC PHOENIX CO.,LIMITED

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BUK7610-100B
N-channel TrenchMOS standard level FET
BUK7610-100B
N-channel TrenchMOS standard level FET6 July 2012 Product data sheet Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Low conduction losses due to low on-state resistance• Q101 compliant• Suitable for standard level gate drive sources• Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications 12 V, 24 V and 42 V loads• Automotive systems• General purpose power switching• Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 [1] - - 75 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 300 W
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12 8.6 10 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13 22 - nC
Avalanche ruggedness - 629 mJ
NXP Semiconductors BUK7610-100B
N-channel TrenchMOS standard level FET
[1] Continuous current is limited by package. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain[1] S source D mounting base; connected to
drain 3
D2PAK (SOT404)
mbb076
[1] It is not possible to make connection to pin 2. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK7610-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404 Marking
Table 4. Marking codes
Type number Marking code
BUK7610-100B BUK7610-100B Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
[1] - 110 ATmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3
[2] - 75 A drain current
Tmb = 100 °C; VGS = 10 V; Fig. 1 [2] - 75 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 438 A
NXP Semiconductors BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol Parameter Conditions Min Max Unit
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 300 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode
[1] - 110 AIS source current Tmb = 25 °C
[2] - 75 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 438 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-sourceavalanche energy ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped 629 mJ
[1] Current is limited by power dissipation chip rating.[2] Continuous current is limited by package.
03ng70
120 50 100 150 200
Tmb(°C)(A)
Cappedat75Adueto package
Fig. 1. Normalized continuous drain current as a
function of mounting base temperature
Tmb(°C)0 20015050 100
03na19
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
NXP Semiconductors BUK7610-100B
N-channel TrenchMOS standard level FET
003aag933-123 10 102 103DS(V)D(A) Limit RDSon= VDS/ID
100µsmsp=10µs
100msms
Cappedat75Adueto package
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 4 - - 0.5 K/W
Rth(j-a) thermal resistance
from junction toambient
mounted on printed-circuit board ;
minimum footprint 50 - K/W
03ng69
Zth(j-mb)(K/W)
0.2=0.5
NXP Semiconductors BUK7610-100B
N-channel TrenchMOS standard level FET Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 89 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10 3 4 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 4.4 V
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12 8.6 10 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12 - 25 mΩ
Dynamic characteristics
QG(tot) total gate charge - 80 - nC
QGS gate-source charge - 18 - nC
QGD gate-drain charge
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13 22 - nC
Ciss input capacitance - 5080 6773 pF
Coss output capacitance - 677 812 pF
Crss reverse transfer
capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 14 168 230 pF
td(on) turn-on delay time - 33 - ns rise time - 45 - ns
td(off) turn-off delay time - 120 - ns fall time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C 36 - ns
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C 4.5 - nHLD internal drain
inductance
from upper edge of drain mountingbase to centre of die ; Tj = 25 °C - 2.5 - nH internal sourceinductance from source lead to source bond pad ;Tj = 25 °C - 7.5 - nH
NXP Semiconductors BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.85 1.2 V
trr reverse recovery time - 69 - ns recovered charge
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C - 212 - nC
03ng76
350 2 4 6 8 10VDS(V)(A)
VGS=4.5V
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
03ng75 10 15 20VGS(V)
RDSon(mΩ)
Fig. 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa35
10-1(A)
min typ max
03ng73
100 20 40 60 80ID(A)
gfs(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values

Partno	Mfg	Dc	Qty	Available	Descript
BUK7610-100B \|BUK7610100B	NXP	N/a	14	avai	N-channel TrenchMOS standard level FET