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BUK7608-55
N-channel TrenchMOS standard level FET
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode
SYMBOL PARAMETER MAX. UNITstandard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
suitablefor surface mounting. Using ID Drain current (DC) 75 A
’trench’ technology the device Ptot Total power dissipation 187 W
featuresvery low on-state resistance Tj Junction temperature 175 ˚C
and has integral zener diodes giving RDS(ON) Drain-source on-state 8 mΩ
ESD protection up to 2kV.It is resistance VGS = 10 V
intended for usein automotive and
general purpose switching
applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION gate drain source drain
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ -55 V
±VGS Gate-source voltage - - 16 V Drain current (DC) Tmb = 25 ˚C - 75 A Drain current (DC) Tmb = 100 ˚C - 65 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Ptot Total power dissipation Tmb = 25 ˚C - 187 W
Tstg, Tj Storage & operating temperature - - 55 175 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITRth j-mb Thermal resistance junction to - - 0.8 K/W
mounting base13
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FET
STATIC CHARACTERISTICSTj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITV(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3.0 4.0 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 μA
Tj = 175˚C - - 500 μA
IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 μA
Tj = 175˚C - - 20 μA
±V(BR)GSS Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
RDS(ON) Drain-source on-state VGS = 10 V; ID = 25 A - 6.5 8 mΩ
resistance Tj = 175˚C - - 17 mΩ
DYNAMIC CHARACTERISTICSTmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITgfs Forward transconductance VDS = 25 V; ID = 25 A 10 45 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 3600 4500 pF
Coss Output capacitance - 830 1000 pF
Crss Feedback capacitance - 320 440 pF
td on Turn-on delay time VDD = 30 V; ID = 25 A; - 27 40 ns Turn-on rise time VGS = 10 V; RG = 10 Ω - 70 105 ns
td off Turn-off delay time Resistive load - 100 140 ns Turn-off fall time - 50 70 ns Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICSTj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITIDR Continuous reverse drain - - 75 A
current
IDRM Pulsed reverse drain current - - 240 A
VSD Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V
IF = 75 A; VGS = 0 V - 1.0 - V
trr Reverse recovery time IF = 75 A; -dIF/dt = 100 A/μs; - 65 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 30 V - 0.18 - μC
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITWDSS Drain-source non-repetitive ID = 75 A; VDD ≤ 25 V; - - 500 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T 20 40 60 80 100 120 140 160 180
Tmb / C
PD% Normalised Power Derating120
110
100
90
80
70
60
50
40
30
20
10
VDS / V
ID / A
1000 10
RDS(ON) = VDS/ID
100 20 40 60 80 100 120 140 160 180
Tmb / C
ID% Normalised Current Derating120
110
100
90
80
70
60
50
40
30
20
10
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth / (K/W)
1E+00
1E-01
1E-02
1E-03
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FETFig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
Fig.10. Gate threshold voltage. 2 468 100
100ID/A
VDS/V 0 20406080 1000
gfs/S
ID/A 20406080 100 1200 RDS(ON)/mOhm
ID/A
-100 -50 0 50 100 150 200
Tmb / degC
Rds(on) normlised to 25degCa 1234 5670
ID/A
VGS/V
-100 -50 0 50 100 150 2000
Tj / C
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FETFig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
Fig.16. Avalanche energy test circuit. 23 451E-06
1E-05
1E-04
1E-03
1E-02
1E-01 Sub-Threshold Conduction 0.2 0.4 0.6 0.8 1 1.20
IF/A
VSDS/V
0.01 0.1 1 10 1000
Thousands pF
Ciss
Coss
Crss
VDS/V 20 40 60 80 100 120 140 160 180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
WDSS% 10 203040506070 8090 1000
VGS/V
QG/nC
T.U.T.
VDD
VGS=0.5 ⋅LI⋅BV /(BV −V)
Philips Semiconductors Product specification
TrenchMOS transistor BUK7608-55
Standard level FETFig.17. Switching test circuit.
VDDVGS
