BUK7540-100A Fast Delivery |IC PHOENIX CO.,LIMITED

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BUK7540-100A
TrenchMOS(tm) transistor Standard level FET
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
Standard level field-effect power
transistorina plastic envelope using VDS Drain-source voltage 100 V
’trench’ technology which features ID Drain current (DC) 37 A
very low on-state resistance.Itis Ptot Total power dissipation 138 W
intended for usein automotive and Tj Junction temperature 175 ˚C
general purpose switching RDS(ON) Drain-source on-state 40 mΩ
applications. resistance VGS = 5 V
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION gate drain source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 100 V
VDGR Drain-gate voltage RGS = 20 kΩ - 100 V
±VGS Gate-source voltage - - 20 V Drain current (DC) Tmb = 25 ˚C - 37 A Drain current (DC) Tmb = 100 ˚C - 26 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 149 A
Ptot Total power dissipation Tmb = 25 ˚C - 138 W
Tstg, Tj Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.1 K/W
mounting base
Rth j-a Thermal resistance junction to in free air 60 - K/W
ambient123
tab
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 100 - - V
voltage Tj = -55˚C 89 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
IDSS Zero gate voltage drain current VDS = 100 V; VGS = 0 V; - 0.05 10 μA
Tj = 175˚C - - 500 μA
IGSS Gate source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA
RDS(ON) Drain-source on-state VGS = 10 V; ID = 40 A - 30 40 mΩ
resistance Tj = 175˚C - - 108 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1720 2293 pFoss Output capacitance - 216 259 pFrss Feedback capacitance - 133 182 pF
td on Turn-on delay time VDD = 30 V; Rload =1.2Ω; - 12 18 ns Turn-on rise time VGS = 5 V; RG = 10 Ω - 5583ns
td off Turn-off delay time - 48 67 ns Turn-off fall time - 30 42 ns Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - 37 A
currentDRM Pulsed reverse drain current - - 149 A
VSD Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V
IF = 37 A; VGS = 0 V - 1.1 - V
trr Reverse recovery time IF = 37 A; -dIF/dt = 100 A/μs; - 70 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 30 V - 0.24 - μC
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
WDSS1 Drain-source non-repetitive ID = 26 A; VDD ≤ 25 V; - - 31 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T 20 40 60 80 100 120 140 160 180
Tmb / C
PD% Normalised Power Derating120
110
100
90
80
70
60
50
40
30
20
10 1
ID/A 100 1000
VDS/V 20 40 60 80 100 120 140 160 180
Tmb / C
ID% Normalised Current Derating120
110
100
90
80
70
60
50
40
30
20
10
1E-07 1E-05 1E-03 1E-01 1E+01
t/s
Zth/(K/W)
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
Fig.8. Typical transfer characteristics.
ID = f(VGS)
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Fig.10. Normalised drain-source on-state resistance. 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
012345 6789 10
Gate-source voltage, VGS (V)
Drain current, ID (A)
0.1 5 10 15 20 25 30 35 40 45 50Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms) 1020 3040ID/A
gfs/S
VGS/V
RDS(ON) Ohm
-100 -50 0 50 100 150 200
Tmb / degC Rds(on) normalised to 25degC
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.12. Sub-threshold drain current.D = f(VGS) ; conditions: Tj = 25 ˚C; VDS = VGS
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
-100 -50 0 50 100 150 2000
Tj / C 10 203040QG / nC
VGS / V 23 451E-06
1E-05
1E-04
1E-03
1E-02
1E-01 Sub-Threshold Conduction 0.10.20.30.40.50.60.70.80.91 1.11.21.31.41.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
0.01 0.1 1 10 100
VDS/V
tan
e / 40 60 80 100 120 140 160 180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
WDSS%
Philips Semiconductors Product specification
TrenchMOS transistor BUK7540-100A
Standard level FET
Fig.17. Avalanche energy test circuit.
Fig.18. Maximum permissible repetitive avalanche
current(IAV) versus avalanche time(tAV) for unclamped
inductive loads.
Fig.19. Switching test circuit.
T.U.T.
VDD
VGS
VDDVGSDSS= 0.5⋅LID ⋅BVDSS /(BVDSS−VDD)
0.001 0.01 0.1 1 10
Avalanche Time, tAV (ms)
IAV

Partno	Mfg	Dc	Qty	Available	Descript
BUK7540-100A \|BUK7540100A	PH	N/a	860	avai	TrenchMOS(tm) transistor Standard level FET