BUK7511-55A ,N-channel TrenchMOS standard level FETBUK7511-55A; BUK7611-55ATrenchMOS™ standard level FETRev. 01 — 1 February 2001 Product specification ..
BUK7511-55B ,Trenchmos (tm) standard level FETApplications■ Automotive systems ■ 12 V and 24 V loads■ Motors, lamps and solenoids ■ General purpo ..
BUK7513-75B ,TrenchMOS (tm) standard level FETApplications■ Automotive systems ■ 12 V, 24 V, and 42 V loads■ Motors, lamps and solenoids ■ Genera ..
BUK75150-55A ,TrenchMOS(TM) standard level FETBUK75150-55A;BUK76150-55ATrenchMOS™ standard level FETRev. 01 — 10 November 2000 Product specificati ..
BUK7515-100A ,TrenchMOS(tm) transistor Standard level FET
BUK7515-100A ,TrenchMOS(tm) transistor Standard level FETLIMITING VALUES AND CHARACTERISTICST = 25˚C unless otherwise specifiedjSYMBOL PARAMETER CONDITIONS ..
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C2235 , TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C2260 , TCXO EFC Standard Low Profile Small Size 100 % RoHS compliant
C230M ,Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 600 V.MAXIMUM RATINGS" DEIEBMEES [Imaging 5 r1” "t/g'-tttt'''(CCC-r-r-C-C230, 231C230( w.231 I "C232, 233 ..
c2383 , The C2383 is designed for color TV class B sound output applications
C2383 , The C2383 is designed for color TV class B sound output applications
BUK7511-55A -BUK7611-55A
N-channel TrenchMOS standard level FET
BUK7511-55A; BUK7611-55A renchMOS™ standard level FET
Rev. 01 — 1 February 2001 Product specification DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7511-55A in SOT78 (TO-220AB)
BUK7611-55A in SOT404(D 2-P AK).
Features TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids.
Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) drain (d) source (s) mounting base;
connected to drain (d)
MBK106
MBK116
MBB076
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) − 55 V drain current (DC) Tmb =25 °C; VGS =10V − 75 A
Ptot total power dissipation Tmb =25°C − 166 W junction temperature − 175 °C
RDSon drain-source on-state resistance VGS=10 V; ID =25A =25 °C9 11 mΩ= 175°C − 22 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) − 55 V
VDGR drain-gate voltage (DC) RGS =20kΩ− 55 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3 75 A
Tmb= 100 °C; VGS =10V; Figure2 − 61 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 347 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 166 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C − 75 A
IDRM pulsed reverse drain current Tmb =25 °C; pulsed; tp≤10μs − 347 A
Avalanche ruggednessWDSS non-repetitive avalanche energy unclamped inductive load; ID =65A;
VDS≤55 V; VGS=10 V; RGS =50Ω;
starting Tmb =25°C 211 mJ
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W
mounted on printed circuit board;
minimum footprint; SOT404
package K/W
Rth(j-mb) thermal resistance from junction to mounting
base
Figure4 0.9 K/W
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C55 −− V= −55 °C50 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 −− V= −55°C −− 4.4 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure7 and8 =25°C − 911 mΩ= 175°C −− 22 mΩ
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 2230 3093 pF
Coss output capacitance − 510 645 pF
Crss reverse transfer capacitance − 290 467 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω; 18 − ns rise time − 90 − ns
td(off) turn-off delay time − 84 − ns fall time − 68 − ns internal drain inductance from drain lead 6 mm from
package to centre of die 4.5 − nH
from contact screw on
mounting base to centre of
die SOT78 3.5 − nH
from upper edge of drain
mounting base to centre of
die SOT404 2.5 − nH internal source inductance from source lead to source
bond pad 7.5 − nH
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Source-drain diodeVSD source-drain (diode forward)
voltage =25A;VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V 62 − ns recovered charge − 140 − nC
Table 5: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Philips Semiconductors BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
