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BUK7606-55A ,TrenchMOS TM standard level FETLimiting valuesTable 3:
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BUK7606-55B ,TrenchMOS (tm) standard level FET
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BUK7506-55A-BUK7606-55A
TrenchMOS TM standard level FET
BUK7506-55A; BUK7606-55A renchMOS™ standard level FET
Rev. 02 — 03 July 2001 Product data DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7506-55A in SOT78 (TO-220AB)
BUK7606-55A in SOT404(D2 -PAK).
Features TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids.
Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) drain (d) source (s) mounting base;
connected to drain (d)
MBK106
MBK116
MBB076
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET Quick reference data Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Table 2: Quick reference dataVDS drain-source voltage (DC) − 55 V drain current (DC) Tmb =25 °C; VGS =10V [1]− 154 A
Ptot total power dissipation Tmb =25°C − 300 W junction temperature − 175 °C
RDSon drain-source on-state resistance VGS=10 V; ID =25A =25°C 5.3 6.3 mΩ= 175°C − 13.2 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) − 55 V
VDGR drain-gate voltage (DC) RGS =20kΩ− 55 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]− 154 A
[2]− 75 A
Tmb= 100 °C; VGS =10V; Figure2 [2]− 75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 616 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 300 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb =25°C [1]− 154 A
[2] 75 A
IDRM pulsed reverse drain current Tmb =25 °C; pulsed; tp≤10μs − 616 A
Avalanche ruggednessWDSS non-repetitive avalanche energy unclamped inductive load; ID =75A;
VDS≤55 V; VGS=10 V; RGS =50Ω;
starting Tmb =25°C 1.1 J
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W
mounted on printed circuit board;
minimum footprint; SOT404
package K/W
Rth(j-mb) thermal resistance from junction to mounting
base
Figure4 0.5 K/W
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C55 −− V= −55 °C50 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 −− V= −55°C −− 4.4 V
IDSS drain-source leakage current VDS=55 V; VGS =0V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure7 and8 =25°C − 5.3 6.3 mΩ= 175°C −− 13.2 mΩ
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 4500 6000 pF
Coss output capacitance − 960 1200 pF
Crss reverse transfer capacitance − 510 850 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω; 35 − ns rise time − 115 − ns
td(off) turn-off delay time − 155 − ns fall time − 110 − ns internal drain inductance from drain lead 6mm from
package to centre of die 4.5 − nH
from contact screw on
mounting base to centre of
die SOT78 3.5 − nH
from upper edge of drain
mounting base to centre of
die SOT404 2.5 − nH internal source inductance from source lead to source
bond pad 7.5 − nH
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
Source-drain diodeVSD source-drain (diode forward)
voltage=30 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V 80 − ns recovered charge − 200 − nC
Table 5: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
Philips Semiconductors BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
