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BUK7504-40A-BUK7604-40A
N-channel TrenchMOS standard level FET
BUK75/76/7E04-40A renchMOS™ standard level FET
Rev. 02 — 7 November 2001 Product data DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2 -PAK);
BUK7E04-40A in SOT226 (I2 -PAK).
Features TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids.
Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) SOT226 (I2 -PAK) drain (d) source (s) mounting base,
connected to
drain (d)
MBK106
MBK112
123MBB076
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET Quick reference data Limiting values[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Table 2: Quick reference dataVDS drain-source voltage (DC) − 40 V drain current (DC) Tmb =25 °C; VGS =10V [1]− 198 A
Ptot total power dissipation Tmb =25°C − 300 W junction temperature − 175 °C
RDSon drain-source on-state resistance VGS=10 V; ID =25A =25°C 3.9 4.5 mΩ= 175°C − 8.5 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) − 40 V
VDGR drain-gate voltage (DC) RGS =20kΩ− 40 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3
[1]− 198 A
[2]− 75 A
Tmb= 100 °C; VGS =10V; Figure2 [2]− 75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 794 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 300 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +175 °C
Source-drain diodeIDR reverse drain current (DC) Tmb = 25 °C [1]− 198 A
[2]− 75 A
IDRM peak reverse drain current Tmb =25 °C; pulsed; tp≤10μs − 794 A
Avalanche ruggednessWDSS non-repetitive avalanche energy unclamped inductive load; ID =75A;
VDS≤40 V; VGS=10 V; RGS =50Ω;
starting Tmb =25°C 1.6 J
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 and
SOT226 packages K/W
mounted on printed circuit board;
minimum footprint; SOT404
package K/W
Rth(j-mb) thermal resistance from junction to mounting
base
Figure4 0.5 K/W
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V =25 °C40 −− V= −55 °C36 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 −− V= −55°C −− 4.4 V
IDSS drain-source leakage current VDS=40 V; VGS =0V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure7 and8 =25°C − 3.9 4.5 mΩ= 175°C −− 8.5 mΩ
Dynamic characteristicsQg(tot) total gate charge VGS =10V;VDD =32V; =25A; Figure14 117 − nC
Qgs gate-to-source charge − 19 − nC
Qgd gate-to-drain (Miller) charge − 50 − nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure12 4300 5730 pF
Coss output capacitance − 1400 1680 pF
Crss reverse transfer capacitance − 800 1100 pF
td(on) turn-on delay time VDD=30 V; RL= 1.2Ω;
VGS =10V; RG =10Ω; 33 − ns rise time − 110 − ns
td(off) turn-off delay time − 151 − ns fall time − 76 − ns internal drain inductance from drain lead 6mm from
package to centre of die 4.5 − nH
from contact screw on
mounting base to centre of
die SOT78 3.5 − nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226 2.5 − nH internal source inductance from source lead to source
bond pad 7.5 − nH
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Source-drain diodeVSD source-drain (diode forward)
voltage=40 A; VGS =0V;
Figure15 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= −100 A/μs
VGS= −10 V; VDS =30V 96 − ns recovered charge − 224 − nC
Table 5: Characteristics…continued =25 °C unless otherwise specified.
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Philips Semiconductors BUK75/76/7E04-40A
TrenchMOS™ standard level FET
