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Partno	Mfg	Dc	Qty	Available	Descript
BUJ103AD	PHILIP	N/a	1990	avai	Silicon diffused power transistor

BUJ103AD ,Silicon diffused power transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BUJ103AD
Silicon diffused power transistor
Product profile1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(D-PAK) surface mounted package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
[1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.
BUJ103AD
Silicon diffused power transistor Low thermal resistance � Fast switching Electronic lighting ballasts � DC-to-DC converters Inverters � Motor control systems VCESM ≤ 700 V � IC ≤ 4 A Ptot ≤ 80 W � hFEsat = 12.5 (typ)
Table 1: Pinning base
SOT428 (D-PAK) collector [1] emitter mounting base; connectedto collector
sym056
Philips Semiconductors BUJ103AD Ordering information Limiting values
Table 2: Ordering information
BUJ103AD D-PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCESM peak collector-emitter voltage VBE = 0 V - 700 V
VCBO collector-base voltage open emitter - 700 V
VCEO collector-emitter voltage open base - 400 V collector current (DC) - 4 A
ICM peak collector current - 8 A base current (DC) - 2 A
IBM peak base current - 4 A
Ptot total power dissipation Tmb ≤ 25 °C; see Figure1 -80 W
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Philips Semiconductors BUJ103AD Thermal characteristics
[1] Device mounted on a printed-circuit board; minimum footprint. Characteristics
Table 4: Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure2 - - 1.56 K/W
Rth(j-a) thermal resistance from junction to ambient [1]- 75 - K/W
Table 5: Characteristics
Tmb = 25 °C; unless otherwise specified.
Static characteristics
ICES collector-emitter cut-off
current
VBE = 0 V; VCE = VCESMmax [1]- - 1.0 mA
VBE = 0 V; VCE = VCESMmax; Tj= 125°C [1]- - 2.0 mA
ICBO collector-base cut-off current VBE = 0 V; VCE = VCESMmax [1]- - 1.0 mA
ICEO collector-emitter cut-off
current
VCEO = VCEOMmax = 400 V [1]- - 0.1 mA
IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 0.1 mA
VCEOsus collector-emitter sustaining
voltage
IB = 0 A; IC = 10 mA; L = 25 mH;
see Figure3 and4
400 - - V
VCEsat collector-emitter saturation
voltage
IC = 3.0 A; IB = 0.6 A; see Figure10 - 0.25 1.0 V
VBEsat base-emitter saturation
voltage
IC = 3.0 A; IB = 0.6 A; see Figure11 - 0.97 1.5 V
hFE DC current gain IC = 1 mA; VCE = 5 V; see Figure9 10 17 32
IC = 500 mA; VCE = 5 V 13 22 32
Philips Semiconductors BUJ103AD
[1] Measured with half sine-wave voltage (curve tracer).
hFEsat DC saturation current gain IC = 2.0 A; VCE = 5 V 11 16 22
IC = 3.0 A; VCE = 5 V - 12.5 -
Dynamic characteristics
Switching times (resistive load); see Figure 5 and6
ton turn-on time ICon = 2.5 A; IBon = −IBoff = 0.5 A; =75Ω 0.52 0.6 μs
tstg storage time - 2.7 3.3 μs fall time - 0.3 0.35 μs
Switching times (inductive load); see Figure 7 and8
tstg storage time ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
VBB= −5V 1.2 1.4 μs fall time - 30 60 ns
Switching times (inductive load); see Figure 7 and8
tstg storage time ICon = 2 A; IBon = 0.4 A; LB = 1 μH;
VBB=−5 V; Tj= 100°C - 1.8 μs fall time - - 120 ns
Table 5: Characteristics …continued
Tmb = 25 °C; unless otherwise specified.
Philips Semiconductors BUJ103AD
Philips Semiconductors BUJ103AD

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