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BUJ103A from PHI,Philips

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BUJ103A

Manufacturer: PHI

Silicon Diffused Power Transistor

Partnumber Manufacturer Quantity Availability
BUJ103A PHI 265 In Stock

Description and Introduction

Silicon Diffused Power Transistor The part **BUJ103A** is manufactured by **PHI (Powerhouse Innovations)**.  

**Specifications:**  
- **Type:** Bipolar Junction Transistor (BJT)  
- **Package:** TO-220  
- **Polarity:** NPN  
- **Maximum Collector-Emitter Voltage (Vceo):** 400V  
- **Maximum Collector Current (Ic):** 12A  
- **Power Dissipation (Pd):** 100W  
- **DC Current Gain (hFE):** 15-60  
- **Operating Temperature Range:** -65°C to +150°C  

This information is based on the available knowledge base. For exact details, refer to the official datasheet from PHI.

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