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BUJ100LR
NPN power transistor
Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) 3 leads plastic package.
1.2 Features and benefits Fast switching High voltage capability of 700 V
1.3 Applications Compact fluorescent lamps (CFL) Electronic lighting ballasts Inverters Off-line self-oscillating power supplies
1.4 Quick reference data
BUJ100LR
NPN power transistor
Rev. 02 — 29 July 2010 Product data sheet
Table 1. Quick reference data collector current DC; see Figure 2 --1 A
Ptot total power
dissipation
Tlead≤25 °C; see Figure 1 --2.1 W
VCESM collector-emitter peak
voltage
VBE=0V --700 V
Static characteristicshFE DC current gain VCE =5V; IC =0.8A; Tlead =25°C; see Figure 8;
see Figure 9
57.5 20
NXP Semiconductors BUJ100LR
NPN power transistor Pinning information Ordering information Limiting values
Table 2. Pinning information B base
SOT54 (TO-92) C collector emitter
Table 3. Ordering informationBUJ100LR TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCESM collector-emitter peak voltage VBE=0V - 700 V
VCBO collector-base voltage IE=0A - 700 V
VCEO collector-emitter voltage IB=0A - 400 V collector current DC; see Figure 2 -1 A
ICM peak collector current - 2 A base current DC - 0.5 A
IBM peak base current - 1 A
Ptot total power dissipation Tlead≤25 °C; see Figure 1 -2.1 W
Tstg storage temperature -65 150 °C junction temperature - 150 °C
VEBO emitter-base voltage IC=0 A; I(Emitter) = 10 mA - 9 V
NXP Semiconductors BUJ100LR
NPN power transistor
NXP Semiconductors BUJ100LR
NPN power transistor Thermal characteristics
Table 5. Thermal characteristicsRth(j-lead) thermal resistance from
junction to lead
see Figure 3 --60 K/W
Rth(j-a) thermal resistance from
junction to ambient
printed-circuit board mounted; lead
length 4 mm 150 - K/W
NXP Semiconductors BUJ100LR
NPN power transistor Characteristics
Table 6. Characteristics
Static characteristicsICES collector-emitter cut-off
current
VBE =0 V; VCE =700 V; Tj= 125°C --5 mA
IEBO emitter-base cut-off
current
VEB =9 V; IC =0A; Tlead=25°C --1 mA
VCEOsus collector-emitter
sustaining voltage =0A; IC =1mA; LC =25mH;
Tlead =25°C; see Figure 4; see Figure 5
400 - - V
VCEsat collector-emitter
saturation voltage= 0.25 A; IB =50 mA; Tlead =25°C;
see Figure 6
-0.2 0.5 V =0.5 A; IB =125 mA; Tlead =25°C;
see Figure 6
-0.3 1 V= 0.75 A; IB =250 mA; Tlead =25°C;
see Figure 6
-0.4 1.5 V
VBEsat base-emitter saturation
voltage= 0.25 A; IB =50 mA; Tlead =25°C;
see Figure 7
--1 V =0.5 A; IB =125 mA; Tlead =25°C;
see Figure 7
--1.2 V
hFE DC current gain IC =0.5 mA; VCE =2V; Tlead =25°C 12 - - =0.4 A; VCE =5V; Tlead =25°C;
see Figure 8; see Figure 9 - 30 =0.8 A; VCE =5V; Tlead =25°C;
see Figure 8; see Figure 9
57.5 20
Dynamic characteristics fall time IC =1A; IBon =200 mA; VBB =-5V; =1µH; Tlead=25 °C; inductive load;
see Figure 10; see Figure 11
-80 - ns
NXP Semiconductors BUJ100LR
NPN power transistor
