BUH517 ,Silicon NPN Power Transistors TO-3PML packageIr, SGS-'lt1K0MStthl
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BUH517
CRT HORIZONTAL DEFLECTION
HIGH VO ..
BUH517 ,Silicon NPN Power Transistors TO-3PML packageABSOLUTE MAXIMUM RATINGS
ISOWATT218
SC05310
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter ..
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BUH517
Silicon NPN Power Transistors TO-3PML package
E;crT/7' S(GSra'iMO) V (O
717 mmmmmgggmcfig IUH517
CRT HORIZONTAL DEFLECTION
HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR
l HIGH BREAKDOWN VOLTAGE CAPABILITY 1
. FULLY INSULATED PACKAGE FOR EASY
MOUNTING
- LOW SATURATION VOLTAGE
u HIGH SWITCHING SPEED
- COMPLETE CHARACTERIZATION OF
POWER LOSSES AND SWITCHING TIMES
AS A FUNCTION OF NEGATIVE BASE CUR-
RENT FOR OPTIMUM DRIVE
APPLICATIONS:
" HORIZONTAL DEFLECTION STAGE IN
STANDARD AND HIGH RESOLUTION DIS- ISOWATT218
PLAYS FOR TV's AND MONITORS
" SWITCHING POWER SUPPLY FOR TV'S
AND MONITORS
INTERNAL SCHEMATIC DIAGRAM
SC05310
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vcso Collector-Base Voltage (IE = O) 1700 V
Vceo Collector-Emitter Voltage (la = 0) 700 V
VEBO Emitter-Base Voltage (kg = 0) 10 V
Ic Collector Current 8 A
ICM Collector Peak Current (tp < 5 ms) 15 A
la Base Current 5 A
IBM Base Peak Current (tp < 5 ms) 8 A
Ptat Total Dissipation at To = 25 ot: 60 W
Tstg Storage Temperature -65 to 150 °C
T, IMax. Operating Junction Temperature 150 °C
February 1991 1/5
cl 'f"GRiil3'ir 0056508 IRI LJ 325
http://www.chipdocs.com
BUH517
THERMAL DATA
Rthecase Thermal Resistance Junction-case Max 2.08 °C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ices Collector Cut-off Vce = 1700 V 1 mA
Current (V35 = 0) VcE = 1700 V T, = 125 °C 2 mA
IEBO Emitter Cut-off Current VEB = 5 V 100 pill
(lc = 0)
VCEoisus) Collector-Emitter lc = 100 mA 700 V
Sustaining Voltage
Van Emitter-Base Voltage le = 10 mA 10 V
(lc = 0)
VCE(sat)* Ctalltsctor-Emitttar IC = 5 A Is = 1.25 A 1.5 V
Saturation Voltage
VBE(sal)* Base-Emitter lc = 5 A '3 = 1.25 A 1.3 V
Saturation Voltage
hFE* DC Current Gain lc = 5 A Vce = 5 V 6
Ic=5A Vce=5V T,=100°C 4
RESISTIVE LOAD Vcc = 400 V Ic = 5 A
ts Storage Time Iss, = 1.25 A '32: 2.5 A 2.7 3.9 us
tt Fall Time 190 280 ns
INDUCTIVE LOAD lc = 5 A f= 15625 Hz
ts Storage Time lm = 1.25 A lisa = 2.5 A 2.3 us
" Fall Time Vceflyback = 1050 si-ir, 106} V 350 ns
INDUCTIVE LOAD lc = 5 A f = 31250 Hz
ts Storage Time 131 = 1.25 A lisa = 2.5 A 2.3 us
tf Fall Time Vceflyback -- 1200 sing 106} V 200 ns
* Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
Safe Operating Areas Thermal Impedance
6032700 mum
'c(A2 . For single non
l repetitive ulse
PULSE OPERATION '
g It MAX 10m
100 CONT
E DC OPERATION
to" 2 A 6 tt 2 4 6 ' 2 t 6
loo 10' 1o2 vc:(v) 1o" 10'3 lo" lo-t +,,(s)
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