BUH50 ,POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
BUH515 ,Silicon NPN Power Transistors TO-3PML packageBUH515®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ HIGH VOLTAGE CAPABILITY ■ FULLY INSULATED P ..
BUH515D ,Silicon NPN Power Transistors TO-3PML packageBUH515D®HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ H ..
BUH517 ,Silicon NPN Power Transistors TO-3PML packageIr, SGS-'lt1K0MStthl
MHCCEESEDE
[r,ahfh10e(%)
BUH517
CRT HORIZONTAL DEFLECTION
HIGH VO ..
BUH517 ,Silicon NPN Power Transistors TO-3PML packageABSOLUTE MAXIMUM RATINGS
ISOWATT218
SC05310
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter ..
BUJ100 ,NPN power transistor
C2012 , Multilayer Ceramic Chip Capacitors General use
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012JB0J226M , General Multilayer Ceramic Chip Capacitors
C2012X5R1A225K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
C2012X7R1C105K , Ceramic Capacitors For General Use SMD
BUH50
POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS
SWITCHMODE� NPN Silicon
Planar Power T ransistor
The BUH50 has an application specific state–of–art die designed for
use in 50 Watts HALOGEN electronic transformers and
SWITCHMODE applications.
This high voltage/high speed transistor exhibits the following main
feature: Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproductible Parametric Distributions Specified Dynamic Saturation Data Full Characterization at 125°C
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
